서지주요정보
La의 첨가량이 $(Pb_{1-x}La_x)TiO_3$ 솔-젤 박막의 물성에 미치는 영향 연구 = Effects of La addition on the properties of Sol-Gel derived $(Pb_{1-x}La_x)TiO_3$ thin films
서명 / 저자 La의 첨가량이 $(Pb_{1-x}La_x)TiO_3$ 솔-젤 박막의 물성에 미치는 영향 연구 = Effects of La addition on the properties of Sol-Gel derived $(Pb_{1-x}La_x)TiO_3$ thin films / 최천기.
저자명 최천기 ; Choi, Chaun-Gi
발행사항 [대전 : 한국과학기술원, 1995].
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등록번호

8005729

소장위치/청구기호

학술문화관(문화관) 보존서고

MCM 95010

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초록정보

Lead lanthanum titanate($Pb_{1-x}La_xTiO_3$, PLT) thin films were fabricated using sol-gel method onto Pt/Ti/$SiO_2$/Si substrates, dried at different temperatures from 400℃ to 440℃ and then, fired at different temperatures from 550℃ to 650℃ using rapid thermal annealing(RTA). The X-ray diffraction(XRD) pattern, microstructure, dielectric properties, polarization vs. electric field(P-E) curve, pyroelectric coefficient, voltage responsivity, etc. were investigated. Effects of the drying temperature and the firing temperature on the properties of PLT thin films are negligible. PLT thin films with high La concentration have the preferred (100) orientation and small grains due to the higher nucleation sites. The fracture surfaces of the films with high La concentration show columnar structure of which the grains grew from the bottom electrode. Dielectric constant, dielectric loss and pyroelectric coefficient increased and remanent polarization, coercive field decreased with the La concentration, which may be due to the concentration of vacancy in the films. To improve the voltage responsivity, the back side of the substrate was etched. The etching solution was 30 wt.% KOH and etching temperature was 90∼95℃. The voltage responsivity was improved when the back side of the substrate was etched, which may be due to the decrease of the thermal mass and thermal conductance.

서지기타정보

서지기타정보
청구기호 {MCM 95010
형태사항 ii, 59 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Chaun-Gi Choi
지도교수의 한글표기 : 노광수
지도교수의 영문표기 : Kwang-Soo No
학위논문 학위논문(석사) - 한국과학기술원 : 무기재료공학과,
서지주기 참고문헌 : p. 57-59
주제 Thin films.
Microstructure.
Dielectrics.
졸-겔법. --과학기술용어시소러스
박막. --과학기술용어시소러스
미세 구조. --과학기술용어시소러스
유전성. --과학기술용어시소러스
Sol-gel
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