A quantum mechanical and numerical charge control scheme, which includes strain effect, was developed to simulate p-type MODFET structure and other two dimensional hole gas device structure. KL hamiltonian and Poisson equation are solved iteratively till convergence is reached. The calculation is carried out for InGaAs/AlGaAs strained HEMT structure and the results were found to have a good agreement with published experimental data in qualitative manner. The experimental Si/$Si_{0.8}Ge_{0.2}$/Si modulation doped samples for hall, velocity vs. field and SDH measurement were designed by using charge control model and grown by MBE. Hole mobility as high as 991 ㎠/V. s at 77K has been obtained at sheet density $1.57×10^{12}cm^{-2}$. From a detail analysis of the Shubnikov de Haas oscillation we determine an effective mass of 0.309 ± 0.012.
