서지주요정보
Heterojunction bipolar transistor by carbon doping and selective metalorganic chemical vapor deposition = 탄소 도핑과 선택적 유기금속화학증착법을 이용한 이종접합 바이폴라 트랜지스터
서명 / 저자 Heterojunction bipolar transistor by carbon doping and selective metalorganic chemical vapor deposition = 탄소 도핑과 선택적 유기금속화학증착법을 이용한 이종접합 바이폴라 트랜지스터 / Jeong-Hwan Son.
저자명 Son, Jeong-Hwan ; 손정환
발행사항 [대전 : 한국과학기술원, 1995].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8005646

소장위치/청구기호

학술문화관(문화관) 보존서고

DEE 95020

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

The performance of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are improved by using carbon-doped base and selective metalorganic chemical vapor deposition (S-MOCVD). The characteristics of carbon tetrachloride ($CCl_4$)-doped GaAs and AlGaAs layers grown by atmospheric-pressure MOCVD are investigated by varying the growth parameters. The hole concentrations as high as $7\times10^{19}cm^{-3}$ are obtained and the hole mobility of the carbon-doped GaAs is higher than that obtained from zinc-doped GaAs at high hole concentrations. The dependence of GaAs lattice contraction on the hole concentration is determined from X-ray diffraction at high doping levels ($1\sim7\times10^{19}cm^{-3}$). For carbon-doped base HBT, it is found that the hole concentration of base layer can be nondestructively measured by using double crystal X-ray diffractometer from the relation between the hole concentration and the strain. AuGe/Ni/Au metallization to carbon-doped GaAs is performed in comparison with zinc- and beryllium-doped GaAs and good ohmic contact with specific contact resistance of $3\times10^{-6}Ω㎠$ is achieved. Carbon-doped base AlGaAs/GaAs HBT is fabricated and compared with zinc-doped base device. No carbon diffusion at the emitter-base junction is observed in secondary-ion mass spectroscopy (SIMS) profiles. DC characteristics of the carbon-doped base HBT are better than the zinc-doped base device. For the carbon-doped base HBT the common emitter current gain of 30 and the base current ideality factor of 1.4 are obtained. The current gain cutoff frequency $f_T$ of 27GHz and the maximum oscillation frequency $f_{\max}$ of 16GHz are achieved at the emitter size of 5Ⅹ50μ㎡. Selectively grown AlGaAs/GaAs HBT with a reduced base-collector capacitance is proposed and fabricated by using S-MOCVD. The proposed HBT features a triangular void over $SiO_2$ stripe. The extrinsic base-collector capacitance is significantly reduced due to the isolation of the extrinsic collector region from the collector metal electrode by the void. The reduction of the extrinsic base-collector capacitance is confirmed by capacitance-voltage measurement. The DC current-voltage characteristics of the selectively grown HBT are similar to those of the conventional one. However, the microwave performance is improved due to the reduced base-collector capacitance in the selectively grown HBT. It is demonstrated that improved microwave performance is caused by greatly reduced extrinsic base-collector capacitance from extracted parameters of small signal equivalent circuit. For two types of HBT with two 3Ⅹ10μ㎡ emitter fingers, the selectively grown HBT has the $f_{max}$ which is 1.4 times higher than that of the conventional device, and the $f_T$ of 43GHz and the $f_{max}$ of 20.5GHz are achieved. Finally, a new BiFET structure co-integrating of selectively grown HBT and GaAs junction-gated floated electron channel field effect transistor (J-FECFET) using S-MOCVD is proposed and fabricated for implementation to a variety of monolithic microwave integrated circuits (MMIC). Fabrication procedure of proposed BiFET is quite simple and has a single growth step. Inter-device isolation is achieved by $SiO_2$ stripes and AuGe/Ni/Au metallization is used for both n- and p-type ohmic contact. In the fabricated BiFET structure, J-FECFET does not operates because of a gate leakage but it can be solved by adjusting the mask layout.

서지기타정보

서지기타정보
청구기호 {DEE 95020
형태사항 iv, 115 p. : 삽도 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 손정환
지도교수의 영문표기 : Young-Se Kwon
지도교수의 한글표기 : 권영세
학위논문 학위논문(박사) - 한국과학기술원 : 전기및전자공학과,
서지주기 Reference : p. 98-107
주제 Bipolar transistors.
Modulation-doped field-effect transistors.
Gallium arsenide semiconductors.
MOCVD. --과학기술용어시소러스
비소화갈륨. --과학기술용어시소러스
접합 트랜지스터. --과학기술용어시소러스
쌍극성 트랜지스터. --과학기술용어시소러스
Plama-enhanced chemical vapor deposition.
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