서지주요정보
플라즈마 화학증착된 Aluminum oxide 박막의 $CF_4$와 $CC1_4$ 플라즈마에서의 Reactive ion etching 특성 = The $CF_4/CC1_4$ reactive ion etching properties of aluminum oxide films deposited by PECVD
서명 / 저자 플라즈마 화학증착된 Aluminum oxide 박막의 $CF_4$와 $CC1_4$ 플라즈마에서의 Reactive ion etching 특성 = The $CF_4/CC1_4$ reactive ion etching properties of aluminum oxide films deposited by PECVD / 김형석.
저자명 김형석 ; Kim, Hyung-Suk
발행사항 [대전 : 한국과학기술원, 1993].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

8003812

소장위치/청구기호

학술문화관(문화관) 보존서고

MEM 93002

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

The etching properties of aluminum oxide thin films deposited by PECVD were studied in $CCl_4$ and $CF_4$ plasma. The etch properties of aluminum oxide are different in each plasma environments. The etch rate of aluminum oxide in $CCl_4$ plasma is about 1 order higher than in $CF_4$ plasma. It was thought that this difference of etch rate in each plasma result from that of etch mechanism. Therefore the etch mechanism of aluminum oxide in each plasma was investgated using Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and Optical Emission Spectroscopy (OES). The OES proved that F, CF, $CF_2$ radicals in $CF_4$ plasma and CCl, Cl radicals in $CCl_4$ plasma did not affect the etch rate of aluminum oxide films dominantly. The surface analysis of aluminum oxide etch by $CF_4$ and $CCl_4$ plasma using XPS, AES proved that the etch product of aluminum oxide in $CF_4$ plasma in $AIF_x$ and the that of aluminum oxide in $CCl_4$ is $AIF_x$. The vapour of $AIF_x$ is higher than that of AlClx therefore etch rate of aluminum oxide in $CCl_4$ plasma is higher than in $CF_4$ plasma. additionally tha etch mask application of aluminum oxide films was studied.

서지기타정보

서지기타정보
청구기호 {MEM 93002
형태사항 iii, 83 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hyung-Suk Kim
지도교수의 한글표기 : 천성순
지도교수의 영문표기 : Soung-Soon Chun
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 79-80
주제 Plasma-enhanced chemical vapor deposition.
Etching.
Aluminum oxide.
Carbon tetrachloride.
플라스마 CVD. --과학기술용어시소러스
에칭. --과학기술용어시소러스
산화알루미늄. --과학기술용어시소러스
플루오로탄산. --과학기술용어시소러스
클로로탄산. --과학기술용어시소러스
QR CODE qr code