D FLIP-FLOP을 위한 GaAs unbuffered FET logic 연구 = A study on GaAs unbuffered FET logic for D FLIP-FLOP

• 서명 / 저자: D FLIP-FLOP을 위한 GaAs unbuffered FET logic 연구 = A study on GaAs unbuffered FET logic for D FLIP-FLOP / 이용희.
• 발행사항: [대전 : 한국과학기술원, 1991].

An GaAs unbuffered FET logic(FL) is designed, fabricated, and measured. It consists of three Depletion-mode GaAs MESFET's and three Schottky diodes. The gate Mask dimension of the fabricated MESFET's is 2.5μm long and 30μm wide. The FL is used for the implementation of D flip-flop circuit in this work.
The output voltage swing of the FL is about 4V and the voltage gain is 6 or so from the measurement of the static transfer curve characteristics.
It is confirmed by the experiments and measurements that the designed and fabricated FL is a good candidate of unit circuitry to make well-performed GaAs logic devices.

• 형태사항: [ii], 51 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Yong-Hee Lee ; 지도교수의 한글표기 : 권영세 ; 지도교수의 영문표기 : Young-Se Kwon
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 : p. 50-51
• 주제: Gallium arsenide semiconductors. ; Metal semiconductor field-effect transistors. ; Diodes, Shottky-barrier. ; MESFET. --과학기술용어시소러스 ; 비소화갈륨. --과학기술용어시소러스 ; 논리 소자. --과학기술용어시소러스 ; 쇼트기 장벽 다이오드. --과학기술용어시소러스 ; Logic devices.