In this study, platinum silicide Schottky diodes for detecting infrared ray were fabricated on p-type silicon wafer and quantum yield was measured. The thickness of platinum silicide film is about 300 Å, so it is classified into thin film Schottky barrier detector ( SBD ). Measured quantum yield is 1.27% at 2 um and barrier height of platinum silicide Schottky diode is about 0.24eV at 90˚K.
IR absorptance within platinum silicide was simulated using matrix method which is used for multi-thin layer structure, and also quantum yield model developed by W.F.Kosonocky was simulated.
Quantum yield of thin film SBD at a wavelength of 2 um is about 10 times higher than the quantum yield of thick film SBD. According to the simulation results, the improvement by a factor of 7 is attributed to the increase of IR absorptance, and the additional improvement by a factor of 1.5 is due to an increase in the internal photoemission.
