서지주요정보
단결정 Si 표면에의 $Al_2O_3$ 화학증착에 있어서 반응변수가 증착속도 및 표면형상에 미치는 영향에 대한 연구 = The effects of deposition variables on deposition rate & morphology in the chemical vapor deposition of $Al_2O_3$ onto silicon single crystal
서명 / 저자 단결정 Si 표면에의 $Al_2O_3$ 화학증착에 있어서 반응변수가 증착속도 및 표면형상에 미치는 영향에 대한 연구 = The effects of deposition variables on deposition rate & morphology in the chemical vapor deposition of $Al_2O_3$ onto silicon single crystal / 김철.
저자명 김철 ; Kim, Chul
발행사항 [서울 : 한국과학기술원, 1983].
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등록번호

4102283

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 8308

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초록정보

Aluminum oxides ($Al_2O_3$) have been deposited by chemical vapor deposition technique using $AlCl_3$, $CO_2$ and $H_2$ gas mixture onto silicon single crystal. The effects of deposition temperature, partial pressures of reactants, total pressure and total flow rate on the deposition rate and the morphology of the $Al_2O_3$ deposit have been investigated. It is found that the C.V.D. of $Al_2O_3$ is a thermally activated process and limited by the surface reaction. $Al_2O_3$ deposited at temperatures ranging from 850℃-1000℃ does not show evident crystallity. However, $Al_2O_3$ crystallizes into α-Alumina with heat treatment at 1200℃ in $H_2$ atmosphere after deposition. The deposition rate as a function of $H_2$ partial pressure show a maximum about 25 Torr of $H_2$ partial pressure, which is related to the formation reaction of $H_2O$. The deposition rate increases as the mole fraction of $AlCl_3$ up to 0.01, and then decreases slightly with higher $Al_2O_3$ mole fractions. As the total pressure increases, the growth rate also increases, and the morphology of the $Al_2O_3$ deposit becomes porous with $Al_2O_3$ soots formed by the homogeneous reaction. The morphology of the $Al_2O_3$ deposit is mainly affected by the supersaturation of the reactant gases and growth characteristics.

서지기타정보

서지기타정보
청구기호 {MMS 8308
형태사항 [iii], 48 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Chul Kim
지도교수의 한글표기 : 천성순
지도교수의 영문표기 : Soung-Soon Chun
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 46-48
주제 Chemical vapor deposition.
Aluminum oxide.
Morphology.
화학 증착. --과학기술용어시소러스
단결정. --과학기술용어시소러스
Single crystal.
Supersaturation.
반응 변수.
표면 반응.
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