서지주요정보
열산화 조건과 열처리 조건이 Silicon 위에 형성한 tantalum oxide 의 성질에 미치는 영향 = Effects of oxidation and annealing conditions on the properties of tantalum oxide films on silicon substrates
서명 / 저자 열산화 조건과 열처리 조건이 Silicon 위에 형성한 tantalum oxide 의 성질에 미치는 영향 = Effects of oxidation and annealing conditions on the properties of tantalum oxide films on silicon substrates / 박성욱.
저자명 박성욱 ; Park, Sung-Wook
발행사항 [대전 : 한국과학기술원, 1992].
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8002444

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 92010

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초록정보

Tantalum oxides have been prepared by thermal oxidation of sputtered tantalum fils and LPCVD on silicon and silicon dioxide substrates at temperature between 450$^\circ$C and 700$^\circ$C. The composition of such oxide is tantalum pentoxide ($Ta_2O_5$) and amount of silicon diffused into the tantalum oxide from the Si substrate increases as the oxidation temperature increases. The degree of short range order of the amorphous tantalum oxide changes with the oxidation temperature. The temperature dependence of the dielectric constant of $Ta_2O_5$ on Si can be explained in terms of its silicon concentration and short range order of noncrystalline. C-V curves of Al/$Ta_2O_5$/Si capacitors show the presence of donor type interface states whose density decreases as the oxidation temperature increases. The flat band voltage of Al/$Ta_2O_5$/Si capacitors become more negative as the oxidation or annealing temperature increases regardless of the annealing ambient. The formation of $SiO_2$ layer at $Ta_2O_5$/Si interface is observed by annealing in dry $O_2$ or $N_2$ and the thickness of this layer increases with the annealing temperature. Leakage current of thin(less than 40nm thick) $Ta_2O_5$ films decreases as a annealing temperature increases in dry $O_2$ or $N_2$. The dielectric constant vs. annealing temperature curve shows a maximum peak at 750$^\circ$C or 800$^\circ$C resulting from the crystallization. It becomes domianant for thicker $Ta_2O_5$ films. But it decreases at higher annealing temperature due to the growth of interface $SiO_2$. The flat band voltage and gate voltage instability as a function of annealing temperature can be explained in terms of the growth of interface $SiO_2$. The electrical properties of $Ta_2O_5$ as a function of annealing conditions do not depend on the fabrication method of $Ta_2O_5$ but strongly depend on the thickness of $Ta_2O_5$.

서지기타정보

서지기타정보
청구기호 {DMS 92010
형태사항 iv, [101] p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Wook Park
지도교수의 영문표기 : 임호빈
지도교수의 한글표기 : Ho-Bin Im
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 수록
주제 Silica.
Memory.
Thin films.
열 처리. --과학기술용어시소러스
산화. --과학기술용어시소러스
규소. --과학기술용어시소러스
Oxidation.
산화탄탈
Tantalum oxides
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