서지주요정보
나노 구조가 삽입된 유기 발광 소자 = Nanostructure embedded organic light-emitting diodes
서명 / 저자 나노 구조가 삽입된 유기 발광 소자 = Nanostructure embedded organic light-emitting diodes / 김진영.
발행사항 [대전 : 한국과학기술원, 2014].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8026074

소장위치/청구기호

학술문화관(문화관)B1층 보존서고

DEE 14042

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Organic Light Emitting Diodes (OLEDs) have attracted great interest due to their potential applications in, for example, display devices and lighting systems. While the achievement of highly efficient OLEDs is important for utilization in various applications, one of problems of OLEDs is their low out-coupling effi-ciency, which is only around 20% in a conventional case. One of reasons for this low out-coupling efficiency is light loss which is substrate mode induced by differences of refractive index between consisting layers. To address this problem, a micro-lens array and a scattering layer have been reported. Some degree of light loss also occurs in the form of Surface Plasmon Polaritons (SPPs) and waveguide mode. A surface plasmon is a kind of charge oscillation along surface of the metal; the light loss induced by surface plasmon mode is high-ly confined between organic layers and the metal cathode. The waveguide mode is trapped in the thick transparent conductive oxide (TCO) layer, which has a higher refractive index than adjacent layers. Various techniques have been reported to extract two optical modes to improve light efficiency; these techniques in-clude use of photonic crystals and nanostructures with periodic patterns. A nano-scaled periodic structure is a good candidate to extract the light loss at a specific emission wavelength; however, fabrication to achieve nano-scaled periodic structures, for example, photolithography and e-beam lithography, is complex and non-economical. Moreover, unexpected changes of color coordinate and electrical property induced by the nanostructure are undesirable if such a device is to be utilized in an optical system or a display device. For this paper, we introduced quasi-periodic Tungsten trioxide (WO3) nanoislands to extract the waveguide mode and the surface plasmon mode which are trapped in OLEDs. Two optical modes can be extracted through Bragg scattering by inserting a grating structure with a periodicity of several hundred nanometers. A self-aggregated silver (Ag) layer, which is achieved using only a thermal an-nealing process, was used as mask for WO3 wet-etching. The suggested method, based on wet-etching, is ex-tremely simple and size-tunable. No angular dependency of emission property in this study is desirable if we are to adopt such a device for various optical applications. Furthermore, cost-effective fabrication without photolithography makes it possible to adopt WO3 nanoislands in large area fabrication. We investigated the quantitative mechanism of out-coupling enhancement in nanoislands embedded organic light-emitting diodes (OLEDs). Numerical calculation was performed for a 2-dimensonal configura-tion with nanoislands; and power dissipation via various optical modes was achieved. Operating stability of nanostructure embedded OLEDs are also investigated. We fabricated various geometric hole-only devices. The thickness of organic layer and the periodicity of nanoislands are varied to analyze the electrical change quantitatively. In addition, we measured the reliability of nanostructure embedded OLEDs. There have been reported that excess charges regardless of polarity act as fluorescence quencher. Thus, we suggest the struc-tural change in nanostructure embedded OLEDs to improve lifetime by achieving charge balance.

유기발광다이오드는 디스플레이, 조명 분야에서 다양하게 활용되고 있다. 유기발광다이오드가 더욱 다양한 분야에서 활용되기 위해서는 높은 전력 효율 기술을 확립하는 것이 중요한데, 전력 효율의 가장 큰 걸림돌이 되는 부분은 20% 내외의 낮은 광추출 효율이다. 광추출 효율은 크게 3가지 광손실 메커니즘에 의해 제약을 받게 되는데, 첫번째는 기판 모드에 의한 광손실이다. 굴절률이 큰 기판에서 공기 중으로 진행하던 빛이 전반사로 인하여 기판 내에 갇히는 현상으로, 마이크로 렌즈 어레이, 산란층을 삽입하여 이를 향상시킨 연구 결과가 제안된 바 있다. 대부분의 광손실은 표면 플라즈몬과 도파관 모드에 의해 발생한다. 표면플라즈몬은 메탈의 표면에 존재하며 빛과 반응하는 전자 집단으로, 메탈 전극 주변에서 강하게 광손실로 나타난다. 도파관 모드의 경우 인덱스가 큰 투명 전극이나 유기층 내에서 강하게 손실로 발생한다. 이러한 표면 플라즈몬과 도파관 모드에 의한 광손실을 극복하기 위하여 주기적인 패턴의 나노 구조와 광결정 구조에 관한 다양한 연구가 제안된바 있다. 이러한 주기적 구조는 특정 파장 대역에서 광추출 효율을 향상시키는데 유효하지만, 리소그래피 같은 복잡한 공정을 활용한다는 단점과, 각도에 따른 발광 특성 변화는 디스플레이 소자에 적용하는데 적합하지 않다. 본 연구에서는 준주기성의 WO3 나노 구조를 제안하여 광추출 효율을 향상시키는 연구를 제안하였다. 나노 구조를 패턴하기 위하여 자발적으로 형성되는 은의 열응집 현상을 활용하였다. 간단하고 저가격 공정으로 구현한 WO3 나노 구조는 다양한 주기를 패턴할 수 있을 뿐만 아니라, 기존 나노 구조들이 가지는 각도에 따른 발광 특성 변화를 제거할 수 있었다. 이는 광학 소자, 디스플레이 등 다양한 소자에 활용가능하며, 또한, 리소그래피를 포함하지 않는 간단한 공정은 저가격, 대면적 산업화가 가능한 공정이다. 또한, 본 연구에서는 나노 구조에 의한 유기발광소자의 광추출 효율 향상 메커니즘을 정량적으로 분석하였다. 이를 위해 2차원 구조의 유기발광소자 구조에 대해 시뮬레이션을 수행하였으며, 각각의 광학 모드에 의한 광손실을 정량적으로 계산하였다. 또한, 나노 구조에 의한 유기 발광 소자의 동작 안정성에 대한 실험을 수행하였다. 다양한 구조의 소자를 제작하여, 나노 구조를 포함하는 소자의 구조적 특성과 전기적 특성을 정량적으로 분석하였다. 마지막으로 나노 구조를 포함하는 소자의 신뢰성 특성을 분석하였다. 나노 구조에 의해 달라진 전기적 특성에 의해 과잉 공급된 전하는 수명 특성에 부정적인 영향을 미치는 것을 실험적으로 판단하였으며, 이를 해결하기 위해 소자의 구조를 달리하여 광추출 효율과 신뢰성을 동시에 확보할 수 있는 방안을 제시하였다.

서지기타정보

서지기타정보
청구기호 {DEE 14042
형태사항 viii, 76 p. : 삽화 ; 30 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Yeong Kim
지도교수의 한글표기 : 최경철
지도교수의 영문표기 : Kyung-Cheol Choi
학위논문 학위논문(박사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 10-12, 43, 74-75
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Propagation of surface plasmon along with interface between the metal and the dielectric[12].

Evanescent property ofelectric field of surface plasmon[12].

Dispersion relation ofphotoninfree space and surfaceplasmon[12]

The mechanism oflight emissionin OLEDs

Electric field of dipolein OLEDs

Energyloss mechanisms ofbottom-emitingOLEDs[1]

(a) SEM images of micro-lens anryy (b) Power efficiency improvementby at- tachingmicro-lens array[5]

Two-dimensional photonic crystal embedded OLEDsto extractthe waveguidemode[8]

Two-dimensional photonics crystal embedded OLEDsto extracttwo opticallosses [38]

Power efficiency ofOLEDs

Majorlightloss mechanismsinOLEDs

Electricfieldlines of an electric dipolein typical OLED structure

In-plane wavevector of dipole emission, kx

Waveguideloss and surfaceplasmon loss in OLEDs[5]

Bragg scattering of waveguidemode and surface plasmon mode

Schematic cross section ofdevices (left) withoutand (right) with quasi-periodic WO3 nanoislands consideredinthis work[6].

Fabrication procedures for WO3 nanoislands [6]

Fabrication procedures for WO3 nanoislands

Electrical property of WO3[4,7,8]

SEM images of self-aggregated Ag:Agthickness

Fabrication procedures for WO3 nanoislands Ag thickness :

SEM images ofself-aggregatedAg annealing temperature, time :

Fabrication procedures for WO3 nanoislands annealing condition :

(a) SEM images ofWO3 film on ITO glass and (b) wet-etching rate test ofWO3 with lmM KOH

Fabrication procedures for WO3 nanoislands etching condition :

SEMimagesofself-aggngatedAg mask and WO3 nanoislands

Topviewol OLED with WO3 nanoislands

Powerspectrumofirregularbuckling structure[14]

SEMimage ofquasi-periodic WO3 nanoislands and (b) calculated power spectrumofWO: nanois- lands versus thewavelength[6]

Reciprocal space ofisotropic grating

multilayer stack waveguide with substrate and coverlayer

(a) Dispersionrelationof waveguidemodesin OLEDswhichis calculated1bytransfermatrix

(a) Calculated isotropic gratingperiodto extract waveguide mode and SP mode (b) Normalized E- fieldprofiles ofTE0, TM0modesat530nm(Alc3emission) [6]

Structures for measurements of device characteristics

Specifications of structures for measurement

(a) Schematic of devices in this experiment(b) Current density-voltage, (c) The currentefficiency versus current density, and (d) (solid line) the EQE and (dotted line) the power efficiency versus luminance characteristicsinthis experiment[6]

(a) Themeasured EL spectra at20mA/cm2ofthefabricated OLED (solidline) withoutand (dotted line) with quasi-periodic WO3nanoislands (b) Enhancementratio ofELspectra withWO3nanoislands as func- tion ofwavelength[6]

(a)Angulardependency ofemission characteristic ofnanostructure embedded OLEDs[18,19

Themeasured radiantintensity profiles atvarious olsservation angles (a) withoutand (b) with WO3 nanoislands

Angulardependency oflightintensity for devices (black line) without and (red line) with WO3 nanoislands while azimuthal angleis fixed. Radiation profile ofa Lambertian emission (dotted line) for each deviceis also represented [6]

CIE colorcoordinate change forthe emission angleofdevices (solidline) without and (dotted line) withWO3nanoislands

Reduction oftransmittance duetoscattering effectin nanostructure embeddedOLEDs[20].

Transmittance measurement

Transmittance evolutions duringWO3nanoislands fabrication

Imagesof(a) BareITO glass (b) WO3film/ITO glass(c) WO3nanois- lands/ITO glass

SEM images of WO3 nanoislands fabricated with different Ag thickness (a) 15 nm, (b) 17 nm and (c) 20 nm

Fabrication procedures for WO3 nanoislands : Tunability

(a) Power spectra of WO3 nanoislands with different periodicities (b) Calculated Braggscattering condition

Schematics of OLED structure

Schematics of OLED structure

(a) Currentdensity-voltageand (b) Power efficiency versus currentdensity characteristics

(a) EL spectra measured in normal direction (b) Calculated enhancement ratio of EL spectra in normal direction

Theschematic for OLEDs consideredin this simulation

Dispersion relations in the OLEDs[9]

Dispersion relation of TM and TE modes in OLEDs calculated by (a) FDTD simulation and (b) transfermatrix. Theperiodicity ofWO3nanoislands (a-400nm) ispresented vertically. Braggscattering condi- tions forTE0, TM0, andTM1 modes are alsoindicated.

Calculated powerdissipation ratio ofOLEDswith(a) planarstructure and (b) nanoislands. Therela tiveratio ofout-coupling, substrate, waveguideandsurface plasmon mode are calculated varyingAlqa thickness

(a) Calculated powerdissipationratio ofOLEDs withnanoislands Therelativeratio ofout-ooupling substrate, waveguide and surface plasmon mode are calculated varying WO3 thickness. (b) Out-coupling en hancement was also calculated.

(a) Calculated powerdissipationratioof OLEDs withnanoislands, Therelative ratio ofout-coupling, substrate, waveguideand surfaceplasmon mode are calculated varying refractive index ofnanoislands. (b) Out- coupling enhancement. was also calculated.

(a) Calculated powerdissipationratioofOLEDs withnanoislands. Therelativeratio ofout-coupling substrate, waveguide and surface plasmon mode are calculated varying periodicity of nanoislands. (b) Out- coupling enhancement was also calculated

Dispersion curves of OLEDs with various periodic nanoislands. TE and TM modes are calculated varyingperiodicity offanoislands

(a) Field enhancement of TE and TM modes in normal direction (b) Calculate out-ooupling en- hancementinnomml direction withvarying periodicity ofnanoislands

ouocally stronger electric field due to reduced organiclayers[1]

(a) current-voltage characteristics of hole-only devices [12]. (b) SEM image of WO3 nanoislands embedded OLEDs

Schematics ofhole-only device

XPSsurveyscans ofWO3film DetailedXPSscanof(b) W4f,(c)Valance band, (d)Oisregionof WOsfilm

Evolution of transmittance during nanoislands fabrication

Current characteristics ofhole-only devices with various thickness oforganic layer (b) calculated current.ratio ofhole-only device withWO3nanoislands andWO3 film

(a) Nomalized operating voltages in hole-only devices with (circle) WO3 filmand (square) WO3 nanoislands (b) Calculated electricfield enhancement as function of thickness ratio withnanoislands and organ- iclayerin nanostructure embeddedhole-only devices

Normalized operating voltages and calculated electric field enhancement as func- tion of thickness ratio with nanoislands and organic layer

(a) Current-voltage characteristics in hole-only devices with nanoislands which have different peri- odicity of(circle) 300 nm, (square) 330 nm and (triangle) 370 nm (b) Normalized current as function of (circle) periodicity and (triangle) coverage ratio

Calculated electricfieldprofileinnanoislands embeddeddevice varyingorganic thickness: (b) 100 nm (c) 200nm, (d) 300nm, (e) 400nmand (f) 500nm

Calculated electric field profile in nanoislands embedded device varying periodicity: (b) 300 nm (C) 400nm, (d) 500nm, (e) 600nmand(f) 800nm

Calculated electric field enhancements as function ofgeometric factors

Degradation model of OLEDs: Metal diffusion [20]

Degradation model of OLEDs: Mobileions model [21]

DegradationinAlq3-based devices due to excess charges(1) [23]

Degradation in Alq3-based devices due to excess charges (2) [25]

Schematic of (left) previous devices and (right) revised devices with (1) thicker HTLand (2) addi- tional layer

(a) I-V,L-V characteristics and (b) lifetime test of OLED device with ITO/NPB (50 nm)/Alq3 (50 nm)/LiF(1 nm)/Al (100 nm). Lifetimeis estimatedlyy SED model

Acceleration lifetime test ofOLED device with ITO/NPB (50nm)/Alq(50nm)/LiF (1 nm)/Al(100 nm)

Acceleration lifetime test

(a)J-V characteristics in nanoislands embedded hole-only device (b) Reliability of OLEDs (red) withand (black) withoutnanoislands

(a) I-V, L-V characteristics and (b) lifetime test of OLED device ITO/CuPc (5 nm)/NPB (50 nm)/Alqa(50nm)/LiF(1 nm)Al(100mm)

(a) I-V, L-V characteristics and (b) lifetime test of OLED device ITO/CuPc (15 nm)/NPB (50 nm)/Alq3(50rm)LiF(1nm)Al(100mm)

(a) I-V, L-V characteristics and (b) lifetime test of OLED device ITO/CuPc (30 nm)/NPB (50 nm)/Alc3(50nm)/LiF(1 nm)Al(100mm)

(a) I-V, L-V characteristics and (b) lifetime test of OLED device ITO/NPB (100 nm)/Alq3 (50 nm)/LiF(1 nm)/Al (100nm)

(a) I-V,L-V characteristics and (b) lifetime test of OLED device ITO/NPB (150 nm)/Alq3 (50 nm)/LiF (1 nm)/Al(100 nm)

(a) I-V.L-V characteristics and (b) lifetime test of OLED device ITO/NPB (100 nm)/Alq (30 nm)/LiF(1 nm)/A1(100 nm)

Operating property and lifetime ratio of the devices with thicker NPB layer

Lifetime of nanostructure embedded OLEDs