서지주요정보
압전 박막을 이용한 Bragg 회절형 acousto-optic 소자의 제조 및 특성평가 = Fabrication and characterization of bragg-diffraction type acousto-optic device using piezoelectric thin films
서명 / 저자 압전 박막을 이용한 Bragg 회절형 acousto-optic 소자의 제조 및 특성평가 = Fabrication and characterization of bragg-diffraction type acousto-optic device using piezoelectric thin films / 이창호.
저자명 이창호 ; Lee, Chang-Ho
발행사항 [대전 : 한국과학기술원, 2002].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8013674

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 02036

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

In this study, we measured acousto-optic (AO) characteristics of integrated thin film structure $(PZT/TiO_x/SiO_2/SiN_x/SiO_2/Si)$ and analyzed the propagation ratio of surface acoustic power and AO figure of merit of $SiN_x$ film for Bragg diffraction type AO device applications. AO Bragg diffraction was induced by AO interaction between surface acoustic wave (SAW) and guided optical beam in the integrated structure. The unique point of this device structure was that we intended to fabricate a AO device using conventional Si (100) substrate and PZT film known as a best piezoelectric material. In first experiment (set #1), we varied AO quality factor (Q=$\pi$, 2$\pi$ and 4$\pi$) at the same conditions of fabrication methods and structure factors such as film thickness and device size. We measured the intensity variation of optical beam increasing acoustic power and estimated AO diffraction efficiency($\zeta$), the ratio of optical intensities of diffracted and incident optical beams. AO diffraction efficiency in the three samples (Q= $\pi$, 2$\pi$ and 4$\pi$) were 4.4, 4.7 and 8.1 % at the acoustic power of 60, 44 and 91 mW, respectively. To analyze the propagation ratio of surface acoustic power and AO figure of merit of $SiN_x$ film, we fabricated new AO devices (set #2, 4 samples) structures with the main variables of thickness in top $SiO_2$ and PZT films. AO diffraction efficiency of these devices were 6∼9% at the same acoustic power (84 mW). As the thickness of total films in AO device was increased, AO diffraction efficiency was decreased. These observations may be due to the decrease of surface acoustic power when it propagating to the thickness direction. Comparing AO diffraction efficiency of theses devices, the propagation ratio of surface acoustic power to the thickness direction was analyzed in top $SiO_2$ and PZT film, respectively. Using AO diffraction efficiency and propagation ratio of surface acoustic power in AO devices (set #2), we calculated total propagation ratio (40∼60%) of surface acoustic power from PZT to SiN_x film and AO figure of merit $(M_2=0.75 \times 10^{-18} s^{3}/g)$ of $SiN_x$ film.

서지기타정보

서지기타정보
청구기호 {DMS 02036
형태사항 viii, 129 p. : 삽도; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Chang-Ho Lee
지도교수의 한글표기 : 노광수
지도교수의 영문표기 : Kwang-Soo No
수록잡지정보 : "Integrated Ferroelectrics". , v. 35 no.1-4 , pp.11-22 (2001)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 124-129
주제 압전박막
광도파로
acousto-optic device
Bragg diffraction
PZT thin film
AO fugure of merit
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