서지주요정보
Cu 확산방지용 TCP MOCVD Ta(Si)N 박막 증착 및 특성에 관한 연구 = Deposition and characterization of TCP MOCVD Ta(Si)N thin films as diffusion barrier for Cu
서명 / 저자 Cu 확산방지용 TCP MOCVD Ta(Si)N 박막 증착 및 특성에 관한 연구 = Deposition and characterization of TCP MOCVD Ta(Si)N thin films as diffusion barrier for Cu / 박혜련.
저자명 박혜련 ; Park, Hye-Lyun
발행사항 [대전 : 한국과학기술원, 2002].
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소장정보

등록번호

8013664

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 02026

휴대폰 전송

도서상태

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반납예정일

초록정보

Ta(Si)N thin films were deposited by TCP (transformer coupled plasma) assisted MOCVD (metal organic chemical vapor deposition) using PDEAT (pentakisdiethylaminotantalum) and SiH4 below 350℃. The characteristics of deposited films were analyzed with plasma characteristics and Cu diffusion barrier properties. The films were deposited with variables of substrate temperature, $H_2/(Ar+H_2)$ ratio, pressure, and input power for plasma generation. The plasma properties of plasma temperature (Te), plasma potential (Vp) and plasma density (Ne) were characterizes by Langmuir probe and OES (optical emission spectroscope). The plasma dissociation efficiency was most effective factor for composition and resistivity of the films. The carbon was incorporated in PECVD TaN films in the form of Ta-C bond and resistivity of the films decreased with the Ta-C content increased. The more source was dissociated the more Ta-C bonding reaction occurred, carbon in the film was increased and resistivity was decreased. PECVD TaN film of 30nm thickness deposited at 320℃ showed a resistivity below 1000μΩcm and was stable for Cu during heat treatment up to 600℃. With an appropriate negative bias on substrates, step coverage was improved as well as diffusion barrier property against Cu was improved. Ta-Si-N films of Si added TaN were amorphous and show improved diffusion barrier property for Cu but also increased resistivity with increase in Si content. The Ta-Si-N film of 30nm thickness with Si content of 17.5% showed a resistivity of 1610μΩcm and was stable for Cu up to 700℃ for 50min.

서지기타정보

서지기타정보
청구기호 {DMS 02026
형태사항 ii, 113 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hye-Lyun Park
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jong Lee
수록잡지명 : "Transformer coupled plasma enhanced metal organic chemical vapor deposition of Ta(Si)N thin films and their Cu diffusion barrier properties". Japanese journal of applied physics
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 111-113
주제 TaN
TaSiN
확산방지막
유도결합플라즈마
금속유기물화학증착법
TaN
TaSiN
diffusion barrier
transformer coupled plasma
MOCVD
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