서지주요정보
광리소그래피 위상변위마스크용 Cr-Al-O-N 박막의 개발 = Development of chromium aluminum oxynitride films as a phase shifting mask material for optical lithography
서명 / 저자 광리소그래피 위상변위마스크용 Cr-Al-O-N 박막의 개발 = Development of chromium aluminum oxynitride films as a phase shifting mask material for optical lithography / 김은아.
저자명 김은아 ; Kim, Eun-Ah
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8012297

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 01012

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Phase-shifting masks (PSMs) have provided a breakthrough in the future semiconductor industry by further extending lithography to the submicrometer order. With the use of PSMs over the past several years, their requirements have changed with the developing semiconductor technology. This study investigated high-transmittance attenuated PSMs (HT-Att-PSMs) to satisfy the requirements of 20±5% transmittance and 180℃ phase shift at the exposure wavelength and less than 40% transmittance at the inspection wavelength. Regarding the wavelength, the inspection wavelength was targeted at 248nm for the ArF laser (exposure wavelength of 193nm) HT-Att-PSM, and 365nm for the KrF laser (exposure wavelength of 248nm) HT-Att-PSM. With simulation, n(refractive index)-k(extinction coefficient)-d(thickness) charts were developed to show optimum ranges of the optical constant for the HT-Att-PSM. The simulation was performed using the matrix method to find the optimum range of the variables that yield a 180℃ phase shift and 20±5% transmittance at the exposure wavelength and less than 40% transmittance at the inspection wavelength. The simulation was verified by comparing calculated transmittance data with measured data. Cr-based materials of chromium fluoride, chromium aluminum oxide, and chromium aluminum oxynitride were investigated to study the applicability to HT-Att-PSMs. Chromium fluoride showed too high a transmittance slope with wavelength to be applicable as a HT-Att-PSM material. Also, the chromium fluoride films degraded in a humid condition. The degradation phenomena of chromium fluoride films in a 100% relative humid condition were investigated. Furthermore, a possible degradation mechanism consisting of multi-step reactions was proposed. Chromium aluminum oxide was chosen as a new candidate for the HT-Att-PSM in this study. Using developed n-k-d charts and film properties, optimum film thickness and composition were determined for the HT-Att-PSM. Additionally, the optical band gap of chromium aluminum oxide films was studied as a basic property of optical material. However, chromium aluminum oxide was found to be difficult in dry etching. Therefore, new material or new etching method, which satisfied optical requirements for the HT-Att-PSM and provided easy dry etching, was needed. For the solution material, chromium aluminum oxynitride was chosen, and it was also a new candidate for the HT-Att-PSM. The optical properties at the deep-UV region of chromium aluminum oxynitride films deposited with a reactive magnetron sputtering system were studied. Film properties were analyzed by varying the composition ratio of Al/(Al+Cr), flow rate ratio of $N_2/Ar$, and deposition power. Transmittance, the refractive index, the extinction coefficient, thickness, composition and etching characteristics were analyzed. This study also examined the relationship between film properties (optical constants, transmittance slope at the deep-UV region, composition, and deposition rate), and process variables (the composition ratio of Al/(Al+Cr), flow rate ratio of $N_2/Ar$, deposition power, and deposition pressure). With the studied film properties and developed n-k-d charts, optimum conditions of chromium aluminum oxynitride films for the HT-Att-PSM were established. Also, tests for dry etching of this material showed successful results. Therefore, chromium aluminum oxynitride is expected to be applied for the HT-Att-PSM at KrF laser and ArF laser. Finally, on the basis of this study, new material was proposed for a future PSM, that is, the HT-Att-PSM at $F_2$ laser of 157nm. PSMs are expected to be used more than 10 years and are required to be developed with varying requirements such as wavelength, transmittance, and illumination axis. The developed method in this study can be applied for the fore-processes developing new PSMs with some modifications according to the requirements. The sequences are summarized as development of n-k-d charts, studying the dependence of optical constants on process condition, and finding the optimum condition with the n-k-d charts and the studied dependence.

서지기타정보

서지기타정보
청구기호 {DMS 01012
형태사항 xxi, 214 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Eun-Ah Kim
지도교수의 한글표기 : 노광수
지도교수의 영문표기 : Kwang-Soo No
수록잡지명 : "Chromium aluminum oxide films for arf line high transmittance attenuated phase shifting mask application". Optical engineering, v.39 no.11, pp.2947-2955 (2000)
수록잡지명 : "Simulation of optical constants range for high-transmittance attenuated phase-shifting masks used in KrF laser and ArF laser". Japanese journal of applied physics, v.39 no.11, pp.6321-6328 (2000)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 194-203
주제 위상변위마스크
광리소그래피
크로뮴 알루미늄 옥시나이트라이드
박막
Phase Shifting Mask
Optical Lithography
Chromium Aluminum Oxynitride
Film
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