서지주요정보
반도체 브리지의 특성에 관한 연구 = A study on the characteristics of semiconductor bridge (SCB)
서명 / 저자 반도체 브리지의 특성에 관한 연구 = A study on the characteristics of semiconductor bridge (SCB) / 박명일
저자명 박명일 ; Park, Myung-Il
발행사항 [대전 : 한국과학기술원, 2001].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8024063

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 01040

휴대폰 전송

도서상태

이용가능

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반납예정일

초록정보

The semiconductor bridge (SCB) consists of a heavily doped polysilicon, which generates plasma upon submission of an electrical energy to ignite the explosive pressed against it. The electrical energy is deposited into the semiconductor bridge when an electrical voltage is applied to it. A conventional CMOS process was adopted to fabricate SCB chips. In an effort to elucidate the plasma generation mechanism of SCB, the currents were forced to flow through polysilicon bridge of 1Ω while voltage drop was measured to obtain the in-situ power dissipation of the bridge. Typical behaviors of two peaks in voltage-time curve were observed. It is inferred from the photo-diode signal that the second peak in the voltage curve results from the plasma generation of SCB. The breakdown voltage of electrical discharge for high pressure proved that the semiconductor bridge is an effective plasma generator. The experimental data for no-fire condition, directly related to the safety of the explosive system, is compared with the theoretical data from modeling. The soldering is studied to replace the wire bonding as a new package of SCB.

서지기타정보

서지기타정보
청구기호 {MMS 01040
형태사항 54 p. ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Myung-Il Park
지도교수의 한글표기 : 박종욱
지도교수의 영문표기 : Chong-Ook Park
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 53
주제 semiconductor
bridge
igniter
plasma
반도체
브리지
점화기
플라즈마
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