서지주요정보
ECR-PECVD 법으로 제조한 PZT 박막의 물성 연구 = Characteriszation of PZT thin films prepared by ECR-PECVD
서명 / 저자 ECR-PECVD 법으로 제조한 PZT 박막의 물성 연구 = Characteriszation of PZT thin films prepared by ECR-PECVD / 김재환.
저자명 김재환 ; Kim, Jae-Whan
발행사항 [대전 : 한국과학기술원, 1996].
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소장정보

등록번호

8006946

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 96019

휴대폰 전송

도서상태

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반납예정일

초록정보

Ferroelectric $Pb(Zr,Ti)O_3$ thin films were prepared on the Pt coated Si substrates at 450℃~490℃ by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) method. Bisdipivaloylmethanato lead [$Pb(DPM)_2$], Zirconium tert-butoxide [$Zr(O-t-C_4H_9)_4$], titanium iso-propoxide [$Ti(O-i-C_3H_7)_4$] were used as Pb, Zr and Ti source materials, respectively. The compositional ratio Zr/Ti in the PZT films was propotional to the ratio of Zr and Ti MO source flow rates. At the early stage of the PZT deposition, pyroclore phase interfatial layer was formed on which perovskite grains grow. The interfacial layer disappeared as the deposition process continued. After the rapid thermal annealing process at 650℃ for 1 minute, a typical 50nm thick PZT film had relative dielectric constant of about 1200 and $SiO_2$ equivalent thickness of about 0.14nm. The role of interfacial layer was discussed and related to the properties of the PZT films.

서지기타정보

서지기타정보
청구기호 {DMS 96019
형태사항 [ii], 77 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jae-Whan Kim
지도교수의 한글표기 : 위당문
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Dang-Moon Wee
지도교수의 영문표기 : Won-Jong Lee
수록잡지명 : "Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition System". Journal of Japanese Applied Physics, vol. 35 (1996)
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 75-76
주제 전자자기공명
플라즈마화학증착법
금속유기화학증착법
PZT
페로브스카이트
강유전체
DRAM.
ECR
PECVD
MOCVD
PZT
Perovskite
Ferroelectric
DRAM
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