The thickness profile of the film deposited by planar circular type magnetron is simulated considering the relationship between magnetic field profile and target erosion rate. The model is confirmed by the measurement of the film thickness profile of the Cr film deposited in this study. It is found that the model is applicable to magnetron sputtering process at low gas pressure.
Film cleanness is found to be enhanced by using mesh. This phenomenon might be attributed to the fact that the flux of Cr is reduced by the mesh to decrease the probability of homogeneous reaction of chromium oxide particles.
Varying deposition parameters such as Ar:$O_2$ flow rate ratio, substrate temperature induces change in physical and optical properties of the films. Ar:$O_2$ flow rate ratio variation mainly induces change in the film composition and deposition rate with no significant change in optical energy gap and Urbach energy except in the unstable flow rate range. Substrate temperature variation mainly induces change in crystal structure, optical energy gap and Urbach energy with no significant change in composition and deposition rate.
