서지주요정보
GaAs 저잡음증폭기 MMIC 설계를 위한 잡음모델 연구 = A novel noise model of GaAs mesfets for low noise amplifier MMIC
서명 / 저자 GaAs 저잡음증폭기 MMIC 설계를 위한 잡음모델 연구 = A novel noise model of GaAs mesfets for low noise amplifier MMIC / 이창석.
저자명 이창석 ; Lee, Chang-Seok
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8006347

소장위치/청구기호

학술문화관(문화관) 보존서고

DEE 96003

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초록정보

A novel noise model of GaAs MESFETs is proposed, which is verified using MESFETs with different structures. Previously reported noise models of MESFETs are analyzed using both measured data and the equations derived in this work. As a result, it is verified that only two independent white noise sources of intrinsic MESFET is sufficient to describe the noise characteristics of a GaAs MESFET as a function of frequency. One of the noise sources is the voltage noise source placed in series with an intrinsic resistor at gate port and the other is the current noise source placed in parallel with a voltage-controlled current source at drain port. Noise data extracted from a GaAs MESFET fabricated by ion implantation process are used to examine all sets of frequency-independent noise parameters previously reported. There are no complete set which is applicable to estimate the dependence of noise characteristics on bias level. The purpose of this work is find the set of frequency-independent noise parameters which can be simply expressed with bias level. A new set of two frequency-independent noise parameters which are linearly dependent on bias level is used for the noise model of this work. One is noise temperature of intrinsic resistor and the other is equivalent noise conductance. Noise temperature of intrinsic resistor is used to represent the magnitude of the voltage noise source placed at gate port and equivalent noise conductance is used for the current noise source placed at drain port. These two frequency-independent noise parameter have a linear dependence on bias level. This make it possible to describe the dependence of frequency-independent noise parameters on bias level with four parameters which are independent of bias level as well as frequency. MESFETs fabricated on epitaxial grown GaAs wafers are also used for verifying the noise model proposed in this work. The model proposed in this work agrees well with the measured data. This suggests that the model can be applied to GaAs MESFETs with different doping structures. The model in this work is examined in designing a two-stage low noise amplifier MMIC. An optimum gate width and a bias level of the first stage MESFET are determined using the noise model. The MMIC fabricated using ion-implantation process shows good performance of noise figure of 1.5 dB, which is coincident with the designed one. It is demonstrated that the noise model can be useful for designing a low noise amplifier MMICs as well as for predicting the noise parameters of GaAs MESFETs.

서지기타정보

서지기타정보
청구기호 {DEE 96003
형태사항 iii, 83 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Chang-Seok Lee
지도교수의 한글표기 : 권영세
지도교수의 영문표기 : Young-Se Kwon
학위논문 학위논문 (박사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 81-83
주제 갈륨비소
전계효과트랜지스터
잡음
모델
저잡음 증폭기
고주파집적회로
GaAs
MESFET
Noise
Model
Low Noise Amplifier
MMIC
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