서지주요정보
Gate bias induced degradation in hydrogenated amorphous silicon thin film transistors = 수소화된 비정질 실리콘 박막 트랜지스터에서 게이트 바이어스에 의해 생성되는 열화현상에 대한 연구
서명 / 저자 Gate bias induced degradation in hydrogenated amorphous silicon thin film transistors = 수소화된 비정질 실리콘 박막 트랜지스터에서 게이트 바이어스에 의해 생성되는 열화현상에 대한 연구 / Chi-Sun Hwang.
저자명 Hwang, Chi-Sun ; 황치선
발행사항 [대전 : 한국과학기술원, 1996].
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8006633

소장위치/청구기호

학술문화관(문화관) 보존서고

DPH 96015

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초록정보

To evaluate the stability of amorphous silicon thin film transistor, thermally stimulated bias stress (TSBS) method is presented. TSBS experiment monitors the drain currents, and the measured drain currents transform into normalized threshold voltage shift. The changes of threshold voltage shift is characterized by two parameters, $E_τ$ and $T_0$, which are related to the effective barrier height and the width of the distribution of barriers for bias induced degradation. The annealing behaviors of the degraded hydrogenated amorphous silicon thin film transistors are studied using isochronal annealing method. We can fit the data using three annealing peaks. And the intensity of the peaks in isochronal annealing spectra changes according to the bias stress conditions (temperature and bias). We can identify three peaks as charge detrapping, interface defect annealing and/or deeply trapped charge detrapping, and defect annealing, respectively. The light induced relaxation phenomena, reduction of threshold voltage and decrease of field effect mobility, are observed in positive bias stressed TFTs. And the gate bias induced enhancement of light induced degradation is also observed. These results can be explained in terms of defect pool model. During the measurement of the temperature dependence of photoconductivity in TFT structure, the photoconductivity thermal quenching is observed for negative gate bias. The type conversion of majority photo carriers is also observed.

서지기타정보

서지기타정보
청구기호 {DPH 96015
형태사항 xi, 106 p. : 삽도 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 황치선
지도교수의 영문표기 : Sung-Chul Shin
공동교수의 영문표기 : Choo-Chon Lee
지도교수의 한글표기 : 신성철
공동교수의 한글표기 : 이주천
수록잡지명 : "Evaluation method for stability of amorphous silicon thin film transistors". Jounal of Applied Physics. American Institute of Physics, pp. 3467-3471
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 Reference : p. 100-104
주제 Thin Film Transistor
Hydrogenated Amorphous Silicon
Degradation
Stability
Photoconductivity
박막트랜지스터
수소화된 비정질 실리콘
열화
안정성
광전도도
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