A study about the microstructure of the $PbTiO_3$ and PZT films deposited by ECR PECVD was carried out by TEM.
The $PbTiO_3$ and PZT films were deposited on Pt(100nm)/Ti(100nm)/$SiO_2$/Si substrates. The film structures were analyzed by XRD and TEM microdiffraction patterns, while the film compositions by SEM WDS and TEM EDS. And the electric properties of the PZT films were analyzed with respect to C-V (Capacitance-Voltage) and I-V (Leakage current-Voltage) characteristics.
For $PbTiO_3$ films, the changes in the film microstructure with variable deposition temperatures, input $O_2$ flow rates and input Pb source flow rates, were investigated. And on the basis of these results, the perovskite $PbTiO_3$ formation tendency was analyzed.
For PZT films deposited at 470℃ and 500℃ respectively, the effect of RTA treatment were analyzed with TEM microstructures and electrc properties. Finally, as an investigation of the cross - sectional microstructure of the PZT film and substrate, the model about the formation of PZT/Pt interface layer and the internal oxidation in the substrate, was suggested.
