서지주요정보
RF PECVD 법에 의해 증착된 TiN 박막 특성에 관한 연구 = A study on the characteristics of the TiN thin films deposited by RF PECVD
서명 / 저자 RF PECVD 법에 의해 증착된 TiN 박막 특성에 관한 연구 = A study on the characteristics of the TiN thin films deposited by RF PECVD / 전병혁.
발행사항 [대전 : 한국과학기술원, 1995].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8005761

소장위치/청구기호

학술문화관(문화관) 보존서고

MEM 95013

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

리뷰정보

초록정보

Titanium nitride films were deposited on the p-type (100) silicon substrates by RF plasma enhanced chemical vapor deposition using a gaseous mixture of $TiCl_4$, $N_2$, $H_2$ and Ar. The variables of the deposition were the $N_2$ flow rate, the RF power and the deposition temperature. The thickness of the deposited films was measured with a α-step. The structure and composition of the deposited films were analysed using XRD, AES and RBS. The resistivity of the TiN films was measured by the four point probe method. The deposition rate increased as the $N_2$ flow rate and the RF power increased and the deposition temperature decreased. As the $N_2$ flow rate increased at 50W and 620℃, the crystallinity of the TiN films was improved and the resistivity decreased. The crystallinity of the deposited TiN films could be also improved by increasing the deposition temperature. The crystalline TiN films showed a strong crystallographic preferred orientation of (200). As the deposition temperature increased to 620℃ at 50W and $N_2$ 45sccm, the residual Cl content in the TiN films reduced to 1.5at% and N/Ti ratio increased to 1.068. Also, the conformality was above 60% at the width and depth of $0.6×0.6\mu^2$ and the resistivity had the lowest value of 56μ Ωcm.

서지기타정보

서지기타정보
청구기호 {MEM 95013
형태사항 iv, 75 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Byung-Hyuk Jun
지도교수의 한글표기 : 이원종
지도교수의 영문표기 : Won-Jong Lee
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 72-75
주제 Plasma-enhanced chemical vapor deposition.
Titanium nitride.
Electric resistance.
Orientation.
화학 증착. --과학기술용어시소러스
우선 방위. --과학기술용어시소러스
전기적 성질. --과학기술용어시소러스
QR CODE qr code