Titanium nitride films were deposited on the p-type (100) silicon substrates by RF plasma enhanced chemical vapor deposition using a gaseous mixture of $TiCl_4$, $N_2$, $H_2$ and Ar. The variables of the deposition were the $N_2$ flow rate, the RF power and the deposition temperature. The thickness of the deposited films was measured with a α-step. The structure and composition of the deposited films were analysed using XRD, AES and RBS. The resistivity of the TiN films was measured by the four point probe method.
The deposition rate increased as the $N_2$ flow rate and the RF power increased and the deposition temperature decreased. As the $N_2$ flow rate increased at 50W and 620℃, the crystallinity of the TiN films was improved and the resistivity decreased. The crystallinity of the deposited TiN films could be also improved by increasing the deposition temperature. The crystalline TiN films showed a strong crystallographic preferred orientation of (200). As the deposition temperature increased to 620℃ at 50W and $N_2$ 45sccm, the residual Cl content in the TiN films reduced to 1.5at% and N/Ti ratio increased to 1.068. Also, the conformality was above 60% at the width and depth of $0.6×0.6\mu^2$ and the resistivity had the lowest value of 56μ Ωcm.