Temperature range of 360-390℃ at which gas-phase reaction can be suppressed PZT film was deposited by MOCVD, and the influence of bottom electrode structure, annealing temperature and Zr/Ti ratio was studied.
Bottom electrode was deposited by DC Magnetron Sputtering Method and various bottom electrode structures were prepared by changing deposition temperature and applying Ti adhesion layer. For Pt single electrode structure, Pt(111) preferred orientation and surface morphology were greatly influenced by deposition temperature. For Pt/Ti double electrode structure, Pt(111) preferred orientation was reduced and surface was more rough than Pt single electrode structure.
For annealing temperature, 650℃ was seem to be insufficient, but at 700℃ perovskite phase was thought to be fully developed.
When deposition of PZT was carried out on various bottom electrode, preferred orientation of PZT was influenced by Pt(111) preferred orientation to a great extent, and surface morphology and electrical properties of PZT were also markedly affected by bottom electrode.
When changing the Zr/Ti ratio by controlling the carrier gas flow rate, the film of composition around MPB had bigger dielectric constant and smaller Ec than the film having Ti rich composition.
