Platinum films deposited by E-beam evaporation are evaluated as bottom electrodes for high dielectric thin films. We present a study of orientation, resistivity, adhesion, surface morphology, microstructure and stress in Pt thin films as function of temperature. This films have been deposited on $SiO_2$/Si substrate and Ti/$SiO_2$/Si substrate at the temperature range from 100 to 450℃ under a low pressure of 5×$10^{-7}$ torr. Characterization by X-ray diffraction showed crystallization to Pt at temperature from 300 to 450℃. The resistivity of Pt thin films decreased with higher orientation. The stress of Pt thin films was measured by diffractometer method. It is shown that the stress has a close relationship with adhesion and surface morphology. High dielectric BST thin films were deposited by RF magnetron sputter deposition onto Pt/$SiO_2$/Si and Pt/Ti/$SiO_2$/Si. The crystalline structure and electrical properties of these films were investigated.
