SOI CMOS circuits have been designed and fabricated for the readout of linear IR detector array. The problem of A1-N type silicon contact in SOI process has been solved using undoped thin poly-Si sacrificial layer under the aluminum.
The readout circuit of linear IR detector array consists of analog amplifier and digital shift register. The threshold voltages, mobilities and subthreshold slopes of the fabricated devices are measured as 0.2V, 650㎠/Vsec, 71mV/decade for NMOS and -0.8V, 270㎠/Vsec,74mv/decade for PMOS, respectively. Shift register has operated up to 3MHz clock frequency with 4pF load capacitance. Analog amplifier exhibits a gain of 500 V/V and a 3dB-bandwidth of 410kHz.
