The p-n junction characteristics of the $Hg_{1-x}Cd_xTe$ implanted by boron have been studied. After ion implantation, the carrier concentration near the surface is $10^18cm^{-3}$. After thermal annealing the concentration near the surface is lower to $10^17cm^{-3}$. When the implanted sample is annealed for 20min at 200℃, the depth of the p-n junction is deep and the structure of the junction is changed from $n^{+}/p$ to $n^{+}/n^{-}/p$. From the analysis of the concentration and mobility near the junction the diffusion process about thermal annealing is known. That is, the Hg which are generated by ion implantation are diffused to the HgCdTe. And they eliminate the Hg vacancies near the junction the source of carrier at n- region is not defect but residual donor impurity.
The P.V. devices are fabricated. When it is annealed for 20 min at 200℃ the reverse leakage current flows much. But when annealed for 20 min at 150℃, the characteristics of the device are improved. First, because P-contact resistance is decreased the forward characteristic of the device is improved. Second, because the tunneling current is decreased the reverse maximum dynamic resistance is increased. On the conclusion, After thermal annealig the p-n junction characteristics are improved and the characteristics of the device are improved.
