서지주요정보
Laser annealing시 비정질실리콘의 결정화에 관한 연구 = Crystallization of amorphous silicon in laser annealing process for TFT-LCD
서명 / 저자 Laser annealing시 비정질실리콘의 결정화에 관한 연구 = Crystallization of amorphous silicon in laser annealing process for TFT-LCD / 류태형.
저자명 류태형 ; Ryu, Tae-Hyoung
발행사항 [대전 : 한국과학기술원, 1994].
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소장정보

등록번호

8004882

소장위치/청구기호

학술문화관(문화관) 보존서고

MAD 94007

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초록정보

Crystallization of amorphous silicon film was performed successfully by excimer laser annealing(ELA) using KrF laser (wavelength: 248nm). In addition, samples after ELA were investigated by the measurement of UV-Reflectance, AFM and DC conductivity. Grain size was enlarged 250nm on the condition of substrate heating at 400℃ and high energy density below 450mJ/㎠, so that DC conductivity increased several orders of magnitude. But the rough surface was observed at high energy density over 300 mJ/㎠, and conductivity was decreased even though large grain could be obtained. The degree of crystallization was compared by reflectance of wavelength 280nm in UV-Reflectance increasing laser energy density. The optimum condition of laser energy density was around 300 mJ/㎠ for undoped 50nm amorphous silicon film in ELA. The elongated beam was better in unifomity than the rectangular beam. Reflectance of He-Ne laser was not suitable as the control parameter of ELA process because of small difference between the amorphous silicon and polycrystalline silicon of the reflectance at wavelength 632nm.

서지기타정보

서지기타정보
청구기호 {MAD 94007
형태사항 45 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Tae-Hyoung Ryu
지도교수의 한글표기 : 유중돈
지도교수의 영문표기 : Choong-Don Yoo
학위논문 학위논문(석사) - 한국과학기술원 : 자동화및설계공학과,
서지주기 참고문헌 : p. 21-24
주제 Amorphous semiconductors.
Laser fusion.
Liquid crystal displays.
Excimer lasers.
레이저 어닐링. --과학기술용어시소러스
액정 표시기. --과학기술용어시소러스
비정질 반도체. --과학기술용어시소러스
결정화. --과학기술용어시소러스
Crystallization.
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