The synthesis and characterization of photosensitive monomers ＆ polymers were studied. In order to solve incompatibility problem which can occur in novolac based two component resist system, a new type of polymer containing photosensitive group in side chain was synthesized.
Orthonaphthoquinonediazide groups were introduced to HST, AST through sulfonyl ester bonds. Upon the introduction, it was expected to bring improvement in the dry-etch resistance by the aromatic sensitizer structure.
From IR, NMR, UV spectra, it was identified that photoactive groups were well introduced to the monomers. The synthesized photoactive polymers were photoreacted by absorbing 300-500nm UV irradiance.
In order to examine photosensitive characteristics, optical parameters of HST-NDSH copolymer were calculated by measuring the optical transmittance of exposed sample film. The optical parameters, A, B and C, were 0.597, 0.290, 0.010 respectively.
Finally, the pattern generation using HST-NDSH photoresist was achieved in 2μm level with the condition of proper exposure and development time. The sensitivity was 225mJ/㎠.
