Diamond films were deposited by using microwave plasma with $CH_4$, $H_2$ $O_2$ gases. The variables for the deposition were the substrate material, the deposition temperature and input gas ratio. The characteristics of the deposited films were analyzed with Raman spectroscopy, SEM, XRD.
For Si substrates, the quality of the deposited diamond films was improved and the growth rate decreased as the $CH_4$ concentration decreased, the $O_2$ concentration increased and the deposition temperature (1% $O_2$ added) decreased. For Inconel 600 substrates, the crystalline diamond films were obtained when the deposition temperature was 600 and 700℃. But, the crystalline diamond films were peeled off locally. At lower and higher deposition temperature the deposited films were amorphous carbon. For steel substrates, the crystalline diamond films were not deposited.
