서지주요정보
RF 마그네트론 스퍼터링법에 의하여 증착한 ZnO 박막의 배향성에 관한 연구 = A study of the preferred orientation of ZnO thin films deposited by RF magnetron sputtering
서명 / 저자 RF 마그네트론 스퍼터링법에 의하여 증착한 ZnO 박막의 배향성에 관한 연구 = A study of the preferred orientation of ZnO thin films deposited by RF magnetron sputtering / 김정태.
발행사항 [대전 : 한국과학기술원, 1994].
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8004690

소장위치/청구기호

학술문화관(문화관) 보존서고

MEM 94004

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In this paper the preferred orientation of ZnO thin films grown on Si (100) substrates by radio frequency(RF) magnetron sputtering has been studied. At first, ZnO thin films were deposited at various temperature(200℃ - 300℃) and RF-input power(100 W - 200 W). At second, ZnO thin films were deposited for various time duration(15 seconds - 20 minutes) at 200 W - 300℃ which was the optimum condition for c-axis orientation according to the former results. And the dependence of c-axis orientation on film thickness and growth behavior has been investigated by X-ray diffraction(XRD) and transmission electron microscopy(TEM). The orientation of ZnO films deposited at 200℃ was mixture of $(10\overline{10})$, (0002), and $(10\overline{11})$, but the films deposited at 300℃ had only (0002) orientation. The c-axis orientation of ZnO thin films grew better as increasing substrate temperature and RF-input power, but the property was more dependent on substrate temperature rather than on RF-input power. Highly c-axis oriented (0002) ZnO thin films of which the standard deviation of X-ray rocking curve was less than 3˚ were deposited at 200 W - 300℃. The films deposited at 200 W - 300℃ for more than 2 minutes were c-axis oriented according to the X-ray diffraction analyses, but we could'nt know the properties of the films deposited for less than 1 minute by X-ray diffraction. Transmission electron microscopy study indicated that the films deposited for 15 seconds and 30 seconds were polycrystalline state with random orientation and the films deposited for 1 minute were c-axis oriented. According to the cross sectional transmission electron microscopy micrographs, the films deposited for 30 seconds had about 3 nm thickness. The films had random orientation, but high-resolution transmission electron microscopy micrograph showed that they had partially c-axis oriented grains. The films deposited for 1 minute had about 9 nm thickness and c-axis oriented ZnO was grown on the surface region of amorphous $SiO_2$. We considered that these results were caused by re-arrangement which was due to high substrate temperature promoted annealing effects. We observed from the films deposited at 200 W - 300℃ for more than 20 minutes that c-axis orientation of polycrystalline ZnO thin films was determined at initial state of growth, and highly c-axis oriented columnar grains of which the surface flatness were less than 20 nm grew continuously from the region of initial layer to about 240 nm thickness.

서지기타정보

서지기타정보
청구기호 {MEM 94004
형태사항 66 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jeong-Tae Kim
지도교수의 한글표기 : 이정용
지도교수의 영문표기 : Jeong-Yong Lee
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 64-66
주제 Sputtering (Physics)
Thin films.
Orientation.
Metals --Heat treatment.
스퍼터 증착. --과학기술용어시소러스
우선 방위. --과학기술용어시소러스
현미경. --과학기술용어시소러스
고분해능 투과 전자 현미경
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