서지주요정보
졸-겔법으로 제조한 겔 분말로 부터 단분산 구형의 탄화규소, 질화규소, 그리고 탄화규소/질화규소 복합 분말의 제조 = Synthesis of monosized spherical SiC, $Si_3N_4$, and $SiC/Si_3N_4$ composite powders from Gel powders derived from Sol-Gel process
서명 / 저자 졸-겔법으로 제조한 겔 분말로 부터 단분산 구형의 탄화규소, 질화규소, 그리고 탄화규소/질화규소 복합 분말의 제조 = Synthesis of monosized spherical SiC, $Si_3N_4$, and $SiC/Si_3N_4$ composite powders from Gel powders derived from Sol-Gel process / 최재영.
저자명 최재영 ; Choi, Jea-Young
발행사항 [대전 : 한국과학기술원, 1994].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8004667

소장위치/청구기호

학술문화관(문화관) 보존서고

MCM 94011

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Monosized spherical SiC, $Si_3N_4$, and $SiC/Si_3N_4$ composite powders were synthesized by carbothermal reduction of gel powders derived from sol-gel processs. Gel powder were synthesized by the hydrolysis of a mixture of phenyltrimethoxysilane and tetramethyl orthosilicate. The ratios of C/Si of gel powders, which were the ratios of carbon and silicon in a mixture of phenyltrimethoxysilane and tetramethyl orthosilicate except the carbon involved in methyl group, were 3.5, 4.0, 4.5, and 6.0. Monosized spherical gel powders were obtained in all the ratios of C/Si of gel powders. Gel powder with the C/Si ratio of 3.5 became monosized spherical SiC powders of submicrometer size by heat-treating at 1450℃ for 4 h in an Ar atmosphere, but could not retain its spherical shape above 1550℃. This SiC powder was porous secondary particle composed of primary particles of nanometer size. Gel powder with the C/Si ratio of 4.5 became monosized spherical $Si_3N_4$ powder by heat-treating at 1500℃ for 4 h in a $N_2$ atmosphere and monosized spherical SiC powder at 1550℃. This result is generally agreed that SiC is thermodynamically more stable than $Si_3N_4$ above certain critical temperature between 1500℃ and 1550℃. Obtained $Si_3N_4$ powder was porous secondary particle composed of primary $Si_3N_4$ particles and free carbon of nanometer size. $Si_3N_4$ powder obtained by heat-treating gel powder with the C/Si ratio of 4.5 at 1500℃ for 4 h in a $N_2$ atmosphere, became monosized spherical $SiC/Si_3N_4$ composite powder by heat-teating at 1400℃ for 2 h in an Ar atmosphere. This $SiC/Si_3N_4$ composite powder was also porous secondary particle composed of primary $Si_3N_4$ and SiC particles of nanometer size.

서지기타정보

서지기타정보
청구기호 {MCM 94011
형태사항 iii, 79 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jea-Young Choi
지도교수의 한글표기 : 김종희
지도교수의 영문표기 : Chong-Hee Kim
학위논문 학위논문(석사) - 한국과학기술원 : 무기재료공학과,
서지주기 참고문헌 : p. 73-79
주제 Powders.
Silicon carbide.
Metals --Heat treatment.
졸-겔법. --과학기술용어시소러스
분말 제조. --과학기술용어시소러스
열 처리. --과학기술용어시소러스
Sol-gel.
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