Electron transport in the SiGe pseudomorphic alloy are thoroughly identified by Monte Carlo simulation. It is generalized that $Si_{1-x}$-Ge$_x$ alloy experiences biaxially tensile or compressive strain by which its bandstructure changes. By taking account of bandstructure modification by strain, we calculate Velocity-E field relation in the application specific situation such as HBT and HEMT. In addition to band structure modification by strain, we also are careful to consider 2 dimensional electron gas. So this thesis dose its way to the explanation of experimental result having defied any reason so far. Electron impact ionization coefficient of SiGe Strained alloy is calculated and those of unstrained Si are determined by experimental technique.
