A Xenon flash lamp was developed and characterized for the application to the recrystallized of a-Si films. The lamp showed a maximum UV light power of 0.1MW/㎠ in duration of 8usec, and then UV(200-400nm) light efficiency(rate of light energy to lectrical energy) of 0.2%.
The temperature profiles were calculated to investigate the recrystallization preocess of amorphous Si(a-Si) in case of using the Xenon flash lamp as a heat source. A standard heat equation including lamp light absorbtion was solved numerically to give the time evolution of temperature and melting as a function of the pulse power and its duration. The minimum values of power for a duration of 8usec were found to be 0.6MW/㎠ for melting a-Si layer on $SiO_2$/Si. The developed lamp does not have the efficient power for the recrystallization. However, we found it possible to enlarge the grain size($^\sim3.5um$) of polycrystalline silicon films by lamp annealing, in a-Si films on glass substrate, if we can have lamp with the power of 0.3MW/㎠ and the duration of lamp light of 8usec.
