Thin films of $PbTiO_3$ were deposited on bare silicon wafers by the sol-gel processing method. The crystallographic and morphological properties of the thin films have been analyzed by the X-ray diffraction method and the scanning electron microscopy. The elemental composition was determined by auger electron spectroscopy. The heat treatment of films were excuted at temperature range from 400℃ to 750℃. The perovskite-type structure was observed only with films annealed at 440℃ and the partially pyrochlore-type structure was found at temperature range from 480℃ to 550℃. The thin films annealed at temperatures more than 600℃ was appeared the only perovskite-type structure.
The formation of the lead-silicate glass and the silicon-dioxide was investigated by FTIR. Lead-silicate glass was appeared in thin films annealed at temperatures more than 500℃ and silicon-dioxide at temperatures more than 600℃.
The thickness of as-dried films was measured by the ellipsometer and assured by side-view of the thin films by SEM.
