서지주요정보
고표면적 응용을 위한 다공성 실리콘의 제조 = Preparation of porous silicon for high surface area application
서명 / 저자 고표면적 응용을 위한 다공성 실리콘의 제조 = Preparation of porous silicon for high surface area application / 정원영.
저자명 정원영 ; Chung, Won-Young
발행사항 [대전 : 한국과학기술원, 1994].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

8004745

소장위치/청구기호

학술문화관(문화관) 보존서고

MCHE 94029

SMS전송

도서상태

이용가능

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반납예정일

초록정보

Porous silicon was discovered in 1950's by Turner and Uhlir during the electropolishing silicon wafer in HF solution. Although porous silicon can find its possibility of application in diverse area, it has not been used commercially since the pore formation mechanism and the properties of porous silicon are not completely understood and the process technology is not mature. The purpose of this study is to investigate the effect of process condition on the pore size distribution in porous silicon, which can be used in capacitor structure of DRAM device which has been highly integrated. Porous silicon was prepared by the anodic reaction using n-type and p-type silicon wafers as anode and platinum as cathode in mixed solution of HF and ethanol in a teflon reactor. Its structure and pore size were examined by SEM photographs. Porous silicons formed on p-type silicon wafer show the network structure of fine pores of which diameters are less than 10nm. Porous silicons formed by anodization in 1:1 HF/ethanol solutions on n-type silicon have the trench structure and their pore diameters are found in the range of 500-700Å when the applied current is 80mA. Pore diameter is increased up to about 1000Å, by chemical etching in $HF-HNO_3-H_2O$ mixed solution with n-type porous silicons. The electric field distribution at the interface was calculated by solving the Poisson's equation. The magnitude of the field around the pore tip, which determines the tunneling current, is much greater than that on the pore wall. Because of the difference in the field strength, pores on n-type silicon propagate straight down. Effects of the depletion layer thickness on the spacing between the pores are also discussed.

서지기타정보

서지기타정보
청구기호 {MCHE 94029
형태사항 v, 62 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Won-Young Chung
지도교수의 한글표기 : 김도현
지도교수의 영문표기 : Do-Hyun Kim
학위논문 학위논문(석사) - 한국과학기술원 : 화학공학과,
서지주기 참고문헌 : p. 58-62
주제 Surfaces-areas and volumes.
Silicon.
실리콘. --과학기술용어시소러스
비표면적.
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