Recrystalization of silicon film on insulator is studied numerically using enthalphy method. Variations of temperature distribution and changes of phase in time are obtained for several power distributions.
We develope simplified 1-D model to compute diffusion equations for global region. To investigate in detail interesting small region where silicon is recrystalized, we stretch the region and compute 2-D diffusion equations with boundary conditions obtained from the simplified 1-D model. By using this method, we can get detailed temperature distributions that show good agreement with results obtained from 2-D model for global region.
