Organometallic single precursors ${[Et_2Al(μ-N^iPr_2)]_2$ (1), $[Et_2Al(μ-NH^iPr)]_2$ (2),$[Et_2Al(μ-NH_2)]_3$ (3), $[Me_2Al(μ-NH^tBu)]_2$ (4), $Et_3B:NH_2^tBu$ (5), $Et_3B:NH_2^iPr$ (6) and $Et_3B:NH_3$ (7)} containing both aluminum ( or boron ) and nitrogen bonded to each other have been synthesized and the precursors 1, 2, and 3 utilized to deposit aluminum nitride (AIN) thin films by organometallic chemical vapor deposition (OMCVD). Structures of 1, 2, 3, 4, 5, 6 and 7 were characterized by Mass and NMR spectroscopy. $^1H$ NMR study shows that the dimeric amido complex 4, $[Me_2Al(μ-NH^tBu)]_2$, undergoes a cis - trans isomerization in solution. The equilibrium has been observed to follow reversible first - order kinetics with $Δ{H˚} = 2.2± 0.07 kJmol^{-1}\mbox{and} ΔS˚ = 2.85 ± 0.07 JK^{-1}mol^{-1}$. The activation parameters for the conversion trans-4 to cis-4 are $Δ{H^1} = 49.7 ± 2.3 kJmol^{-1} \mbox{and} Δ{S_1}=-126.3 ± 0.2JK^{-1}mol^{-1}$ and for the reverse reaction cis-4 to trans-4 are $Δ{H_1} = 47.5 ± 2.3kJmol^{-1} \mbox{and} Δ{S_{-1}}=-129.1 ± 0.5 JK^{-1}mol^{-1}$. Preparation of AlN thin films on the Si (100) single crystal surface has been examined at temperatures between 300℃ and 650℃ at $5~6×10^{-5}$ Torr by hot wall OMCVD method. The deposited thin films were analyzed by using Infrared, X - ray photoelectron spectroscopy, X - ray Diffraction and Scanning electron microscopy. The optimum temperatures for the formation of A1N thin films were found to be about 500℃ for 2 and about 400℃ for 3. However, the AlN thin film was not deposited with precursor 1. The AlN thin films were prepared at about 730℃ and about $620℃ with precursors 2 and 3 by cold wall CVD method respectively.
