서지주요정보
매우 낮은 동작 전류를 갖는 전반사형 InGaAsP/InP 광스위치 소자에 관한 연구 = Study on the InGaAsP/InP total internal reflection optical switch with very low operation current
서명 / 저자 매우 낮은 동작 전류를 갖는 전반사형 InGaAsP/InP 광스위치 소자에 관한 연구 = Study on the InGaAsP/InP total internal reflection optical switch with very low operation current / 오광룡.
저자명 오광룡 ; Oh, Kwang-Ryong
발행사항 [대전 : 한국과학기술원, 1994].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8004302

소장위치/청구기호

학술문화관(문화관) 보존서고

DEE 94003

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

A new structure optical switch with an p/n/p/n current blocking layer has been designed. In TIR(Total Internal Reflection) optical switches, efficient current confinement of the reflection region is required to obtain the large refractive index change. The current injection region of the new optical switch, which is embedded with Zn-diffusion and p/n/p/n current blocking layer, is formed at the intersection of two rib waveguides. This optical switch has the groove etched InGaAs cap layer. This optical switch is a self-aligned structure. The current spreading effect can be minimized using the p/n/p/n blocking layer, thus the injected current can be confined efficiently in the reflection region. And this structure can provide a large p-contact area, leading to small contact resistance. The opeation current and the carrier lifetime has been calculated as a function of the cross angle of the optical switch in order to understand the parameter specifications of the optical switch. Following the calculated results, the operation current density is 2.73 kA/㎠ for total reflection in the optical switch with 6 ˚ crossing angle and InGaAsP(Eg=0.953eV, 0.8㎛ thick) core layer. The 2×2 InGaAsP/InP optical switch with an p/n/p/n current blocking layer has been fabricated using MOCVD crystal growth, selective wet-etching, Zn-diffusion, and metallization. The width of the waveguide was 7㎛ while that in the intersecting region was controlled to be 17㎛. The total length of the switch was 3mm. The area of the current path is 250×3.5μ㎡. A very low operation current of 20 mA has been achieved for the first time with an 2×2 InGaAsP/InP TIR optical switch with 6 ˚ crossing angle. This operation current corresponds to a current density of 2.3 kA/㎠. This results are rather well agree with the calculated results. From the above results, it can be concluded that efficient current confinement is obtained using the p/n/p/n current blocking layer. The measured crosstalk was -8.2 dB for 0 mA and -9.7 dB for 20 mA, and the total insertion loss was about 20 dB. The 3-dB bandwidth of the optical switch was 59 MHz at the injection current of 20 mA. The extracted carrier-lifetime is 2.7 ns.

서지기타정보

서지기타정보
청구기호 {DEE 94003
형태사항 iv, 80 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Kwang-Ryong Oh
지도교수의 한글표기 : 이귀로
지도교수의 영문표기 : Kwy-Ro Lee
학위논문 학위논문(박사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 71-80
주제 Total internal reflection (Optics)
Switching circuits.
Etching.
Layer structure (Solids)
광 스위치. --과학기술용어시소러스
전반사. --과학기술용어시소러스
캐리어 수명. --과학기술용어시소러스
Static relays.
QR CODE qr code