서지주요정보
모든 3차 수차를 제거하여 회절한계의 성능을 지닌 극자외선 lithography용 4-반사경 광학계(배율=1) = Four-mirror optical imaging system (magnification=1) for subhalf-micron lithography derived from the solutions of all zero 3rd order optical aberrations
서명 / 저자 모든 3차 수차를 제거하여 회절한계의 성능을 지닌 극자외선 lithography용 4-반사경 광학계(배율=1) = Four-mirror optical imaging system (magnification=1) for subhalf-micron lithography derived from the solutions of all zero 3rd order optical aberrations / 조영민.
발행사항 [대전 : 한국과학기술원, 1994].
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8004165

소장위치/청구기호

학술문화관(문화관) 보존서고

DPH 94019

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A four-aspherical mirror system with unit magnification is investigated for use in deep ultraviolet(DUV) optical lithography. It is derived from the solution of all zero third order aberrations for the four-spherical mirror system with unit magnification. We have first examined the holosymmetric four-spherical mirror system in which all orders of coma and distortion are zero, and obtained a uniquely exact solution of all zero third order aberrations for the system. This system has no free design parameter left and has too rigid symmetry to correct the residual spherical aberration. To avoid lacks of optical design freedom of the holosymmetric system, new numerical solutions of non-holosymmetric system with all zero third order aberrations are derived in 1-dimensional design parameter domain. For the numerical solutions, several system characteristics such as possibility of fabrication, system size, vignetting, residual higher order aberrations are investigated and a system with the best characteristics is selected. In this system telecentricity in image space is obtained by stop shift. To reduce the residual higher aberrations of the selected system, aspherizations on the spherical surfaces are carried out. The computer-aided optimization technique gives a aspherical system with diffraction limited performance for DUV wavelength of $0.248 \mu m$(KrF excimer laser line). This system has N.A. of 0.4, image field diameter of 5.2mm, and relative radius of central obscuration of 0.60. Spot diagrams show Rayleigh resolution of $0.38 \mu m$ and depth of focus(DOF) of $1.0 \mu m$. MTF analysis with the central obscuration gives spatial frequency of 460cycles/mm at which MTF values for all fields are over than 0.45 within DOF of $1.0 \mu m$. In order to improve resolution keeping an appropriate depth of focus, the shorter wavelength is advantageous. So the new aspherization is optimized to give diffraction limited performance for the shorter DUV wavelength of $0.193 \mu m$(ArF excimer laser line). The final system we have obtained consists of all aspherized mirrors and has N.A. of 0.35, image field diameter of 5.2mm and relative radius of central obscuration of 0.58. Spot diagrams show Rayleigh resolution of $0.34 \mu m$ and DOF of $1.2 \mu m$. MTF analysis with the central obscuration gives spatial frequency of 540cycles/mm at which MTF values for all fields are over than 0.45 within DOF of $1.2 \mu m$. This reflective system is compact in size and expected to be useful in optical lithographic application.

서지기타정보

서지기타정보
청구기호 {DPH 94019
형태사항 iv, 94 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Young-Min Cho
지도교수의 한글표기 : 공홍진
공동교수의 한글표기 : 이상수
지도교수의 영문표기 : Hong-Jin Kong
공동교수의 영문표기 : Sang-Soo Lee
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 89-94
주제 리소그래피. --과학기술용어시소러스
자외선. --과학기술용어시소러스
광학계. --과학기술용어시소러스
Aberrations.
Lithography.
Mirrors.
Ultraviolet radiation.
수차 (광학). --과학기술용어시소러스
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