In thesis, lattice-mismatched $In_xGa_{1-x}As$/GaAs on GaAs water is grown by MOCVD, and characterized. InAs composition, x, is estimated by measuring the lattice constant in DXRD. The growth rate and doping concentration of the grown InGaAs layer is also characterized.
Cross-hatch by misfit dislocation is observed along the [110] direction when the thickness of epitaxial layer exceeds the critical layer thickness.
The doping concentration of $In_{0.15}Ga_{0.85}As$ doped with $SiH_4$ is above 1×$10^{19}cm^{-3}$. This level of high doping leads to a nonalloyed ohimc contact. The minimum specific contact resistance obtained is 6×$10^{-5}$ Ω-㎠.
Some basic reaserches are also performed for $In_xGa_{1-x}As$/GaAs strained-layer device applications. The strained-layer superlattice and the strained-layer quantum-well are grown and characterized by DXRD and PL measurement. We can figure out the width of the quantum well and InAs composition from the results. These also show that the abruptness in the heterojunction is defined well enough for device applications.
