In this study, SiC coating was deposited on graphite by chemical vapor deposition method with $CH_3SiCl_3$/$H_2$ mixture gas as the source gas. Previous to experiments, the thermodynamic equilibrium calculation was performed to find out the range of deposition conditions to form SiC, and the molar quantities of gas phase species in the chamber and SiC yield was calculated. From the calculation, the deposition condition was found out to be between 1200-2000K for the deposition temperature and 10-100 for ratio of $H_2$/$CH_3SiCl_3$. Also the gas phase of $SiCl_2$ and $CH_4$, $C_2H_2$ found to take important role in the deposition process as the carrier of Si and C, respectively. As the result of experiment, the deposition process was found out to be thermally activated process with surface reaction as the rate limiting step, and the activation energy was 13.0 kcal/mole. Deposited SiC film had polycrystalline β-SiC structure with preferred orientation at (111) direction. The film composition varied either to Si rich or C rich, and with higher H2 ratio and higher deposition temperature, Si-rich SiC films formed. This Si-rich coatings had better anti-oxidation properties than C-rich films, because the extra carbon in the C-rich films oxidize and vaporize at high temperature making the film porous and degrade its anti-oxidation properties. In case of Si-rich film, the extra Si formed SiO2 glass which covers the surface and fills the possible defects in the coating which enhances the protection property of the film. The deposition condition of optimum anti-oxidation properties found to be deposition temperature of 1300℃, pressure of 10 torr with $H_2$/$CH_3SiCl_3$ ratio of 50. The oxidation test was performed by thermogravimetric analyser in atmospheric environment increasing the temperature form room temperature to 1300℃ at the rate of 10℃/min. The Si-rich SiC coating shows no weight loss which means no oxidation of graphite occured. The result in 1200℃ isothermal oxidation test exibited 3.1% weight loss after 100 hours.
