서지주요정보
레이저 반사를 이용한 $A1_xGa_{1-x}As$ Bragg reflector 성장속도 측정 및 고온에서의 굴절률 보정 = In-Situ laserreflectometry applied to the growth of $A1_xGa_{1-x}As$ bragg reflectors by MOCVD, and calibration of refractive index at high temperature
서명 / 저자 레이저 반사를 이용한 $A1_xGa_{1-x}As$ Bragg reflector 성장속도 측정 및 고온에서의 굴절률 보정 = In-Situ laserreflectometry applied to the growth of $A1_xGa_{1-x}As$ bragg reflectors by MOCVD, and calibration of refractive index at high temperature / 신재헌.
발행사항 [대전 : 한국과학기술원, 1993].
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소장정보

등록번호

8003538

소장위치/청구기호

학술문화관(문화관) 보존서고

MPH 93012

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

리뷰정보

초록정보

The precise $Al_xGa_{1-x}As$ Bragg reflectors are most important parts of VCSEL (Vertical-Cavity Surface-Emitting Laser). To achieve lasing in VCSEL, we need an accurate thickness control, which is difficult for MOCVD (Metal-Organic Chemical Vapour Deposition). This paper presents an in-situ thickness monitoring method by laser reflectometry. In general, the intensity of reflected laser beam from a thin film oscillates regularly with film thickness increase under a constant growth condition. Therefore, by measuring the period of oscillation, the growth rate of the thin film can be found. For accurate estimation of growth rate, reasonably thick buffer layers are grown in advance before the actual growth of the Bragg reflector. Then we can use the growth rates for the growth of the Bragg reflector which will be grown on top of the buffer layers, without changing the wafer. We calibrated the complex refractive index of $Al_xGa_{1-x}As$ at the MOCVD growth temperature of 650℃. Since the laser reflectance depends on the optical thickness (n*d) of the thin film, we cannot know the film thickness without the refractive index. A new method is introduced for index calibration in this paper. The new method uses the real time reflectance signal and the reflection spectroscopy of the Bragg reflector after growth. The result shows that the real and imaginary parts of refractive index for $Al_xGa_{1-x}As$ are $n_x$=4.08-0.688×- 0.125 $x^2$ $k_x$=0.31-0.18×-0.414 $x^ 2(0≤x≤0.6) respectively, at 650℃. Using these index data, we achieve in-situ thickness monitoring and MOCVD system control during the growth of Bragg reflectors. The Bragg reflectors with accuracy better than 2% are successfully grown.

서지기타정보

서지기타정보
청구기호 {MPH 93012
형태사항 [iii], 49 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jae-Heon Shin
지도교수의 한글표기 : 이용희
지도교수의 영문표기 : Yong-Hee Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 48-49
주제 Vapor-plating.
Gallium arsenide semiconductors.
Aluminum.
Refractive index.
화학 증착. --과학기술용어시소러스
비소화갈륨알루미늄. --과학기술용어시소러스
성장 속도. --과학기술용어시소러스
굴절률. --과학기술용어시소러스
Bragg 반사. --과학기술용어시소러스
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