서지주요정보
플라즈마 화학증착법에 의하여 증착된 Aluminum oxide 박막의 에칭 특성에 관한 연구 = A study on etching properties of aluminum oxide films deposited by plasma enhanced chemical vapor deposition
서명 / 저자 플라즈마 화학증착법에 의하여 증착된 Aluminum oxide 박막의 에칭 특성에 관한 연구 = A study on etching properties of aluminum oxide films deposited by plasma enhanced chemical vapor deposition / 정진기.
저자명 정진기 ; Jung, Jin-Ki
발행사항 [대전 : 한국과학기술원, 1991].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8002060

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 9135

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Aluminum oxide films were deposited on silicon substrates by plasmaenhanced chemical vapor deposition (PECVD) using trimethyl-aluminum (TMA), $N_2O$ and He gases. The etch characteristics of aluminum oxide film was studied to use the film as etch barrier material. The film composition and bonding type of as-deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy(XPS). The aluminum oxide films were found to contain hydrogen and small amount of carbon. The aluminum oxide films were etched in a DI water:48% HF solution (100:1. in volume percent), and wet etch rates ratio of aluminum oxide films by PECVD to thermal $SiO_2$ films were 125-375:1. On the other hand the aluminum oxide films were hardly etched in a $CF_4/O_2$ plasma, and dry etch rates ratio of aluminum oxide film to thermal $SiO_2$ films were 1:50-100. Also, the wet and dry etch rates of the aluminum oxide films increased as the deposition temperature lowered or $N_2O$/TMA ratio increased. Finally, these films were used as etch mask material on thermal $SiO_2$ film in a lift-off mask scheme and their performance was evaluated. The aluminum oxide films by PECVD provided a high selectivity with $SiO_2$ and given a highly anisotropic etch in $SiO_2$. From the above results, it is believed that the aluminum oxide film by PECVD using TMA source is very promising for the further use in VLSI and microelectronics as a etch barrier mask material.

서지기타정보

서지기타정보
청구기호 {MMS 9135
형태사항 [iv], 85 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Ki Jung
지도교수의 한글표기 : 천성순
지도교수의 영문표기 : Soung-Soon Chun
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 83-85
주제 Aluminum oxide.
Plasma-enhanced chemical vapor deposition.
Microelectronics.
Thin films.
화학 증착. --과학기술용어시소러스
에칭. --과학기술용어시소러스
박막. --과학기술용어시소러스
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