서지주요정보
$p^+$ polysilicon 층 위에 저압화학증착된 $WSi_x$ 박막의 열처리에 따른 전기적 특성 = Electrical properties of annealed $WSi_x$ films depostied on $p^+$ polysilicon by LPCVD
서명 / 저자 $p^+$ polysilicon 층 위에 저압화학증착된 $WSi_x$ 박막의 열처리에 따른 전기적 특성 = Electrical properties of annealed $WSi_x$ films depostied on $p^+$ polysilicon by LPCVD / 이희승.
발행사항 [대전 : 한국과학기술원, 1991].
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소장정보

등록번호

8002055

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 9130

휴대폰 전송

도서상태

이용가능(대출불가)

사유안내

반납예정일

리뷰정보

초록정보

Tungsten silicide($Wsi_x$) films deposited by low pressure chemical vapor deposition method on heavily doped p-type polysilicon layers were annealed by rapid thermal process in a nitrogen atmosphere. The effects of annealing of the $WSi_x$-polysilicon compositcs(tungsten polycides) have been investigated by stress measurements, electrical resistivity and Hall measurements, and by analyses X-ray diffraction patterns, scanning electron microscopy(SEM), Auger electron spectroscopy(AES) and secondary ion mass spectrometry(SIMS) data. The stress in the $WSi_x$ films was found to be nearly $1\times10^{10}dynes/cm^2$, tensile. The electrical resistivity of the specimens with polycide structure decreased with an increase in annealing temperature or time, and decreased to 190μΩ-cm in the specimen annealed at 1000℃ for 60 seconds. The analyses of X-ray diffraction patterns and SEM photographs indicate that crystallization of tetragonal $WSi_2$ takes place and grain size increases with increasing annealing temperature. These results suggest that the variation of electrical resistivity with annealing temperature is closely related to the grain size. Hall measurements of the tungsten silicide films deposited by LPCVD on $SiO_2/Si$-substrate followed by thermal annealing show that the majority carrier is hole in all the tungsten silicide films annealed up to 1000℃. Hall measurements of the specimens with polycide structure also show that the majority carrier is hole in all the specimens independent of the annealing conditions. Depth profile analysis by AES method indicates that the excess Si atoms in $WSi_x$ layer accumulated in the middle of $WSi_x$ layer so that the $WSi_x$ films do not have homogeneous composition after annealing at 1000℃ for 30 seconds. This result show that the homogenization of $WSi_x$ film requires the annealing at high temperature for a long time. From SIMS analyses, it was found that B and F elements diffuses outward and resides inside the oxide films during annealing process. The penetration of B atoms from polysilicon layer into the Si-substrate does not take place during rapid thermal annealing of 30 seconds.

서지기타정보

서지기타정보
청구기호 {MMS 9130
형태사항 iii, 53 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Heui-Seung Lee
지도교수의 한글표기 : 임호빈
지도교수의 영문표기 : Ho-Bin Im
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 52-53
주제 Chemical vapor deposition.
Tungsten alloys.
Metals --Heat treatment.
Semiconductors.
화학 증착. --과학기술용어시소러스
박막. --과학기술용어시소러스
텅스텐 합금. --과학기술용어시소러스
전기적 성질. --과학기술용어시소러스
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