Titanium dioxied thin films were chemical vapor deposited at low pressure by pyrolysis of organometallic compound[ethyl titanate; $[Ti(OC_2H_5)_4]$ The deposition process were performed in the hot wall type reactor, reaction temperatures were varied between 300-500℃ at constant pressure:5torr.
The effect of the deposition temperature, total flow rate, partial pressure of ethyl titanate, and oxygen content on the deposition rate and refractive index of $TiO_2$ deposit were investigated. The CVD of $TiO_2$ is a thermally activated process and limited by the surface chemical reaction.
X-ray diffraction patterns shows the deposited $TiO_2$ films consist of anatase phase, and surface morphology and fracure surface were using scanning electron microscopy.
Auger Electron Spectroscopy depth profile analysis were carried out to study diffusion reaction of the $TiO_2-Si$ interfaces. To measure thickness dependence of dielectric constant and to predict the variation of charge concentration at interface, C-V measuremnts at 1 MHz were performed.
As a result, increase of reaction temperature and oxygen content made carbon free and dense $TiO_2$ thin films. Therefore these films show good C-V characteristics and high dielectric constant(5-80).
