갈륨비소/알루미늄 갈륨비소 이형접합 MISFET(metal insulator semiconductor FET) = GaAs/AlGaAs heterojunction MISFET(metal insulator semiconductor FET)

• 서명 / 저자: 갈륨비소/알루미늄 갈륨비소 이형접합 MISFET(metal insulator semiconductor FET) = GaAs/AlGaAs heterojunction MISFET(metal insulator semiconductor FET) / 정종완.
• 발행사항: [대전 : 한국과학기술원, 1991

A MISFET which consists of $n^+$ GaAs/$N^-$ AlGaAs structure was fabricated. In order to obtain good ohmic contact for heterostructure, alloying condition was investigated. Good condition was 430℃, 15∼20min. Using this condition, Transistor whose gate length and gate width are 0.8μm and 240μm was measured. Extracted max-transconductance, $Gm_{max}$ was 96mS/mm. And its schottky barrier $\phi_b$ was 1.1eV. It shows good schottky characteristics of AlGaAs.

• 형태사항: [iii], 52 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Jong-Wan Jung ; 지도교수의 한글표기 : 권영세 ; 지도교수의 영문표기 : Young-Se Kwon
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 : p. 51-52
• 주제: Semiconductors --Junctions. ; Metal insulator semiconductors. ; Metal-insulator transitions. ; Field-effect transistors. ; 반도체. --과학기술용어시소러스 ; 반도체 접합. --과학기술용어시소러스 ; FET. --과학기술용어시소러스 ; 제조. --과학기술용어시소러스 ; Solid freeform fabrication.