$Hg_{0.7}Cd_{0.3}Te$ photovoltaic 대형 적외선 감지소자의 제작 및 특성 평가 = Fabrication and characterization of large area $Hg_{0.7}Cd_{0.3}Te$ photovoltaic infrared detector

• 서명 / 저자: $Hg_{0.7}Cd_{0.3}Te$ photovoltaic 대형 적외선 감지소자의 제작 및 특성 평가 = Fabrication and characterization of large area $Hg_{0.7}Cd_{0.3}Te$ photovoltaic infrared detector / 정한.
• 발행사항: [대전 : 한국과학기술원, 1991].

A 3∼5μm photovoltaic infrared detector which has $n^+$/p structure has been fabricated.
The substrate of the photovoltaic(PV) device is $Hg_{1-x}Cd_x$Te with composition of x=0.288 and p concentration of $Na=1.9\times10^{15}/cm^3$. $N^+$-type region is formed by boron ion implantation with an energy of 100keV, dose of $1\times10^{14}cm^{-2}$. The diode has a circular shape with diameter of 2.71mm.
Ideality factor of the P-V device is 2.0 and its $R_oA$ is $11,000\Omega-cm^2$. The normalized detectivity of $4.7\times10^9cmHz^{1/2}$/W has been measured.
The goal of present investigation is to acheive $R_oA$ 200Ω-㎠, and dectectivity greater than $1.0\times10^{11}cmHz^{1/2}/W$. In order to meet this goal, it is believed that $Hg_{1-x}Cd_xTe$ with x=0.3 and p concentration of about $2\times10^{16}/cm^3$ has to be used.

• 형태사항: [iii], 63 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 부록 수록 ; 저자명의 영문표기 : Han Chung ; 지도교수의 한글표기 : 이희철 ; 지도교수의 영문표기 : Hee-Chul Lee
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 : p. 59-60
• 주제: Infrared detectors. ; Solid freeform fabrication. ; Diodes. ; 다이오드. --과학기술용어시소러스 ; 적외선 분광법. --과학기술용어시소러스 ; 광전 효과. --과학기술용어시소러스 ; 제조. --과학기술용어시소러스 ; Photovoltaic effect.