An GaAs unbuffered FET logic(FL) is designed, fabricated, and measured. It consists of three Depletion-mode GaAs MESFET's and three Schottky diodes. The gate Mask dimension of the fabricated MESFET's is 2.5μm long and 30μm wide. The FL is used for the implementation of D flip-flop circuit in this work.
The output voltage swing of the FL is about 4V and the voltage gain is 6 or so from the measurement of the static transfer curve characteristics.
It is confirmed by the experiments and measurements that the designed and fabricated FL is a good candidate of unit circuitry to make well-performed GaAs logic devices.