서지주요정보
텅스텐 건식에칭에서 $CF_4/O_2$가스계에 CO 와 $CO_2$첨가 효과 = Effect of addition of CO and $CO_2$ to $CF_4/O_2$ etching system for tungsten etching
서명 / 저자 텅스텐 건식에칭에서 $CF_4/O_2$가스계에 CO 와 $CO_2$첨가 효과 = Effect of addition of CO and $CO_2$ to $CF_4/O_2$ etching system for tungsten etching / 권성구.
저자명 권성구 ; Kwon, Sung-Ku
발행사항 [대전 : 한국과학기술원, 1991].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

8002230

소장위치/청구기호

학술문화관(문화관) 보존서고

MCE 9102

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

LPCVD tungsten film has been etched using $CF_4/O_2$ plasma in a reactive ion etching(RIF) reactor having asymmetric parallel electrodes. Silicon dioxide and photo resist(PR) have also been etched to compare the etching characteristics with those of tungsten film. Laser and point detector was used to determine the etch rates of these films. CO and $CO_2$ gases are added to $CF_4/O_2$ gas system to enhance the etch rate and selectivity of W film. Mass spectroscopy and optical emission spectroscopy(OES) were used to study the reaction and etching products of W film. From the results of mass spectroscopy and OES, it is suggested that the main role of CO is scanvenging F and O atoms while that of $CO_2$ is increasing the concentration of O atoms. It is also suggested that the main etchants of tungsten are $CF_x$ and F radicals leading to the volatile etching product of $WF_6$. While the role of oxygen atom is to remove the carbon containing polymer which might be deposited on the surface of W film during etching process. In $CF_4/O_2$ gas system, the maximum etch rate of tungsten was obtained at about 50% oxygen, while that of silicon dioxide at about 30% oxygen in feed gas. With the addition of CO and $CO_2$ to $CF_4/O_2$ gas system, the etch rate of tungsten increased when a small amount of these gases were added. In the case of CO, tungsten etch rate increased up to the flow rate of 1 sccm. For $CO_2$. etch rate increased up to 5 sccm. It was found that the selectivity, the ratio of W etch rate to that of $SiO_2$, could be increased to 3.1 and 4.1 by adding CO and $CO_2$, respectively, from 2.0 which was the maximum value when using only $CF_4/O_2$ gas system.

서지기타정보

서지기타정보
청구기호 {MCE 9102
형태사항 [xv], 127 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Sung-Ku Kwon
지도교수의 한글표기 : 정인재
공동교수의 한글표기 : 우성일
지도교수의 영문표기 : In-Jae Chung
공동교수의 영문표기 : Seong-Ihl Woo
학위논문 학위논문(석사) - 한국과학기술원 : 화학공학과,
서지주기 참고문헌 : p. 121-124
주제 Materials testing laboratories.
에칭. --과학기술용어시소러스
기계적 성질. --과학기술용어시소러스
Etchings.
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