서지주요정보
가시광 영역 AlGaAS/GaAs 표면 방출형 LED = Visible wavelength AlGaAs/GaAs surface emitting LED
서명 / 저자 가시광 영역 AlGaAS/GaAs 표면 방출형 LED = Visible wavelength AlGaAs/GaAs surface emitting LED / 최성천.
발행사항 [대전 : 한국과학기술원, 1990].
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소장정보

등록번호

8001149

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 9086

휴대폰 전송

도서상태

이용가능(대출불가)

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반납예정일

리뷰정보

초록정보

To improve the optical output power intensity of the visible AlGaAs LED with double heterostructure, the various methods were studied. At first, it was needed to reduce the defects which was introduced during the LPE process. As a possible method, the turbo molecular pump was installed to the LPE system. By this, the graphite boat could be undergone high temperature baking at 900℃ for 50hr with the vacuum of less than $1\times10^{-5}$ torr. After the baking, the efficiency of LED improved as much as 5 times. The Al mole fraction and doping concentration of each layer in the fabricated LED structure were optimized by simulation. The data is as follows: Al mole fractions were 0.48, 0.36, and 0.7 and doping concentrations were $5\times10^{17}cm^{-3}$, $2\times10^{16}cm^{-3}$, and $2\times10^{17}cm^{-3}$ in the n-cladding layer, active layer, and p-cladding layer, respectively. Electro-luminescence and photo-luminescence spectrum were measured on the fabricated samples. It can be seen from the data that there were many impurity levels in the forbidden band gap and therefore optical output power was much degraded. The optical output power was 100$\mu$W at the injection current of 20mA.

서지기타정보

서지기타정보
청구기호 {MEE 9086
형태사항 [ii], 52 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Seong-Cheon Choi
지도교수의 한글표기 : 권영세
지도교수의 영문표기 : Young-Se Kwon
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 수록
주제 Epitaxy.
Electroluminescence.
Photoluminescence.
발광 다이오드. --과학기술용어시소러스
가시 스펙트럼. --과학기술용어시소러스
광 루미네센스. --과학기술용어시소러스
전자 루미네센스. --과학기술용어시소러스
액상 성장. --과학기술용어시소러스
Light emitting diodes.
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