A Rapid Thermal Process(RTP) system has been designed and implemented to form the titanium silicide ($TiSi_2$) on silicon substrate. Titanium silicides are formed on (100) silicon substrate by rapid thermal process of Ti layers which are deposited on Si by sputtering. the rapid thermal process is used temperatures of 650~900℃ for 5 to 60 sec. The samples are characterized by measuring their sheet resistance and also the phase using the X-ray diffraction method. For samples annealed at 650℃ and 700℃ for 20 sec, TiO, TiSi, $TiSi_2$ are observed. At 900℃, only $TiSi_2$ are detected. Resistivity is less than 17 $\mu\;\Omega$·cm when treated at 700~900℃ for 20 sec. During the thermal treatment, silicon dioxide reacts with Ti, and the quality of $SiO_2$ is degraded. Therefore, two-step annealing is needed. The contact resistances of Al/$TiSi_2/Si layer are measured using the Kelvin resistor patterns. The result shows that specific contact resistance of Al/$TiSi_2$/$n^+-Si$ layer is $2\times10^{-6}\Omega·cm^2$ which is lower than Al/$n^+-Si$ layer.
