서지주요정보
2-D 소자 모의실험을 이용한 floating guard ring이 있는 $p^+-n$ 접합 다이오드의 수치해석적 분석 = Numerical analysis of $p^+-n$ junction diode with floating guard ring by two dimensional device simulation
서명 / 저자 2-D 소자 모의실험을 이용한 floating guard ring이 있는 $p^+-n$ 접합 다이오드의 수치해석적 분석 = Numerical analysis of $p^+-n$ junction diode with floating guard ring by two dimensional device simulation / 이원우.
저자명 이원우 ; Lee, Won-Woo
발행사항 [대전 : 한국과학기술원, 1990].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

8001101

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 9063

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Guard ring voltage and breakdown voltage of the reverse biased $p^+$-n junction diode with a single floating ring are extensively studied using two dimensional device simulation. A self-consistent solution of Poisson and current continuity equations with impact ionization model allows simulating of the complete reverse characteristics for planar junction devices. It is shown that the guard ring potential is determined from the requirement of the balance between the current generated thermally and that due to thermionic emission over the barrier formed between anode and floating ring. Furthermore, the sensitivity of the guard ring potential as well as the breakdown voltage with respect to the parameter variation such as $Si-SiO_2$ interface charge $Q_{ss}$, temperature and minority carrier recombination times, are also studied. the results indicate that the breakdown voltage variation is very sensitive to $Q_{ss}$ charge variation, while rather insensitive to the variations of temperature and minority carrier recombination time. Simple explanation for this is given from the guard ring potential dependent barrier height. We also find that the role of $Q_{ss}$ on smaller breakdown voltage is twofold. Firstly, it increases the floating guard ring potential which increases the maximum field formed between anode and guard ring. Secondly, it directly increases the maximum electric field formed near the main junction. Above results should be considered properly for the optimum design of the junction termination in power semiconductor devices.

서지기타정보

서지기타정보
청구기호 {MEE 9063
형태사항 [iii], 45 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Won-Woo Lee
지도교수의 한글표기 : 김충기
공동교수의 한글표기 : 이귀로
지도교수의 영문표기 : Choong-Ki Kim
공동교수의 영문표기 : Kwy-Ro Lee
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 44-45
주제 Electron impact ionization.
Diodes, semiconductors.
Potential theory (Physics)
접합 다이오드. --과학기술용어시소러스
충돌 이온화. --과학기술용어시소러스
연속 방정식. --과학기술용어시소러스
Poisson 방정식. --과학기술용어시소러스
퍼텐셜 장벽. --과학기술용어시소러스
Breakdown voltage.
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