A RIE (Reactive Ion Etching) system was designed and set up. Experiments of GaAs etching by this RIE system using $CCL_2F_2$, and/or Ar, He gas were done. Especially, these effects of process parameters on etch rate and etched pattern profile were shown. Process parameters which are gas selection, RF power density, gas pressure, and gas flow rate were varied and these effects on etch rate were investigated.
Moderate etch rate was 150~200 Å/min and vertical etching was not done successfully. But nearly directional etching was obtained. To increase etch rate and obtain good etching uniformity, gas confinement tool should be needed.
